Datasheet > MJD122RLG

MJD122RLG

更新时间： 2024-11-25 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
8页	106K
描述
8.0 A，100 V，NPN 达林顿双极功率晶体管

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数据手册

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MJD122RLG 数据手册

MJD122, NJVMJD122

(NPN), MJD127,

NJVMJD127 (PNP)

Complementary Darlington

Power Transistor

www.onsemi.com

DPAK For Surface Mount Applications

SILICON

POWER TRANSISTOR

8 AMPERES

Designed for general purpose amplifier and low speed switching

applications.

100 VOLTS, 20 WATTS

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Surface Mount Replacements for 2N6040−2N6045 Series,

TIP120−TIP122 Series, and TIP125−TIP127 Series

DPAK

CASE 369C

STYLE 1

• Monolithic Construction With Built−in Base−Emitter Shunt Resistors

• High DC Current Gain: h = 2500 (Typ) @ I = 4.0 Adc

• Epoxy Meets UL 94 V−0 @ 0.125 in

COLLECTOR 2, 4

• ESD Ratings:

♦ Human Body Model, 3B > 8000 V

♦ Machine Model, C > 400 V

BASE

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

EMITTER 3

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING DIAGRAM

AYWW

J12xG

= Assembly Location

= Year

WW = Work Week

= 2 or 7

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

Publication Order Number:

September, 2016 − Rev. 15

MJD122/D

12 3 4 5 6 7 8

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