Datasheet > MJD127R-CH

MJD127R-CH

更新时间： 2024-11-21 14:53:07

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
4页	778K
描述
达林顿三极管

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中文翻译

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数据手册

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MJD127R-CH 数据手册

MJD127R-CH

PNP Silicon Power Darlington Transistor

Features

• AEC-Q101 Qualified

• Halogen and Antimony Free(HAF), RoHS compliant

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Absolute Maximum Ratings (T_a= 25

Parameter

unless otherwise specified)

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Rating

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

100

Peak Collector Current, Pulsed

Base Current

-I_CM

120

-I_B

Total Dissipation

P_tot

T_C= 25

T_a= 25

Total Dissipation ¹⁾

P_tot

1.75

Operating Junction and Storage Temperature Range

T_j,T_stg

- 65 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

6.25

71.4

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ¹⁾

R_θJA

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 4

Dated: 14/08/2023 Rev: 02

12 3 4

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