是否Rohs认证: | 不符合 | 生命周期: | Transferred |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.7 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 8 A |
基于收集器的最大容量: | 300 pF | 集电极-发射极最大电压: | 100 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 功耗环境最大值: | 20 W |
最大功率耗散 (Abs): | 20 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4 MHz |
最大关闭时间(toff): | 3500 ns | VCEsat-Max: | 4 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD127G | ONSEMI |
获取价格 |
Complementary Darlington Power Transistor | |
MJD127PNP | CDIL |
获取价格 |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS | |
MJD127R | SWST |
获取价格 |
功率三极管 | |
MJD127R-AH | SWST |
获取价格 |
达林顿三极管 | |
MJD127R-CH | SWST |
获取价格 |
达林顿三极管 | |
MJD127R-HAF | SWST |
获取价格 |
达林顿三极管 | |
MJD127RLG | ONSEMI |
获取价格 |
8.0 A,100 V,PNP 达林顿双极功率晶体管 | |
MJD127T4 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT | |
MJD127T4 | ONSEMI |
获取价格 |
Complementary Darlington Power Transistor | |
MJD127T4 | STMICROELECTRONICS |
获取价格 |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |