5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率双极晶体管> MJD122T4
MJD122T4 PDF预览

MJD122T4

更新时间： 2024-09-16 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
7页 87K
描述
Complementary Darlington Power Transistor

阅读下载

中文翻译

获取价格

MJD122T4 技术参数

是否无铅： 含铅生命周期：Obsolete
包装说明：PLASTIC, CASE 369C-01, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.06
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：100 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：100
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：NPN最大功率耗散 (Abs)：20 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn80Pb20)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：4 MHz
Base Number Matches：1

MJD122T4 数据手册

 浏览型号MJD122T4的Datasheet PDF文件第2页浏览型号MJD122T4的Datasheet PDF文件第3页浏览型号MJD122T4的Datasheet PDF文件第4页浏览型号MJD122T4的Datasheet PDF文件第5页浏览型号MJD122T4的Datasheet PDF文件第6页浏览型号MJD122T4的Datasheet PDF文件第7页 
MJD122 (NPN)  
MJD127 (PNP)  
Preferred Device  
Complementary Darlington  
Power Transistor  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose amplifier and low speed switching  
applications.  
SILICON  
POWER TRANSISTOR  
8 AMPERES  
100 VOLTS, 20 WATTS  
Features  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
• Surface Mount Replacements for 2N6040−2N6045 Series,  
TIP120−TIP122 Series, and TIP125−TIP127 Series  
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors  
• High DC Current Gain: h = 2500 (Typ) @ I = 4.0 Adc  
4
DPAK  
CASE 369C  
STYLE 1  
FE  
C
2
1
• Epoxy Meets UL 94 V−0 @ 0.125 in  
3
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
MARKING DIAGRAM  
• Pb−Free Packages are Available  
MAXIMUM RATINGS  
YWW  
J12xG  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
100  
100  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CB  
EB  
Y
= Year  
WW = Work Week  
V
x
G
= 2 or 7  
= Pb−Free Package  
Collector Current − Continuous  
− Peak  
I
8
16  
C
Base Current  
I
120  
mAdc  
B
ORDERING INFORMATION  
Total Power Dissipation @ T = 25°C  
P
P
20  
0.16  
W
W/°C  
C
D
D
†
75 Units/Rail  
75 Units/Rail  
Derate above 25°C  
Device  
Package  
Shipping  
MJD122  
DPAK  
Total Power Dissipation (Note 1)  
@ T = 25°C  
1.75  
0.014  
W
W/°C  
A
MJD122G  
DPAK  
Derate above 25°C  
(Pb−Free)  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
MJD122T4  
DPAK  
2500/Tape & Reel  
2500/Tape & Reel  
MJD122T4G  
DPAK  
THERMAL CHARACTERISTICS  
Characteristic  
(Pb−Free)  
Symbol  
Max  
Unit  
DPAK  
75 Units/Rail  
75 Units/Rail  
MJD127  
Thermal Resistance  
Junction−to−Case  
R
q
JC  
6.25  
°C/W  
MJD127G  
DPAK  
(Pb−Free)  
Thermal Resistance  
R
71.4  
°C/W  
q
JA  
MJD127T4  
DPAK  
2500/Tape & Reel  
2500/Tape & Reel  
Junction−to−Ambient (Note1)  
MJD127T4G  
DPAK  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 7  
MJD122/D  
 
1234567

中文翻译

下载PDF

MJD122T4 替代型号

型号 品牌 替代类型 描述 数据表
MJD122T4G ONSEMI

完全替代

 Complementary Darlington Power Transistor
NJVMJD122T4G ONSEMI

类似代替

 Complementary Darlington Power Transistor
MJD122G ONSEMI

类似代替

 Complementary Darlington Power Transistor

与MJD122T4相关器件

型号 品牌 获取价格 描述 数据表
MJD122T4G ONSEMI

获取价格

 		Complementary Darlington Power Transistor
MJD122TF FAIRCHILD

获取价格

 		暂无描述
MJD122TF ONSEMI

获取价格

 		8.0 A, 100 V NPN Darlington Bipolar Power Transistor, 2000-REEL
MJD122-TP MCC

获取价格

 		Silicon NPN epitaxial planer Transistors
MJD122-TP-HF MCC

获取价格

 		Power Bipolar Transistor,
MJD127 ONSEMI

获取价格

 		Complementary Darlington Power Transistors
MJD127 MOTOROLA

获取价格

 		SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
MJD127 CDIL

获取价格

 		COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD127 MCC

获取价格

 		Silicon PNP epitaxial planer Transistors
MJD127 SAMSUNG

获取价格

 		PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS)

与MJD122T4相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证