Datasheet > MJD127

MJD127

更新时间： 2024-09-17 14:52:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	919K
描述
TO-251

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中文翻译

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数据手册

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MJD127 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-251-3L Plastic-Encapsulate Transistors

TO-251-3L

MJD127 TRANSISTOR (PNP)

1.BASE

FEATURES

High DC Current Gain

2.COLLECTOR

3.EMITTER

Electrically Similar to Popular TIP127

Built-in a Damper Diode at E-C

PNP

typ. =5 K

typ. =210

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XXXX=Code

MJD127

XXXX

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-100

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

-8

P_C

1.5

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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