Datasheet > MJD122_09

MJD122_09

更新时间： 2024-11-02 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管达林顿晶体管
页数	文件大小	规格书
5页	157K
描述
NPN Silicon Darlington Transistor

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MJD122_09 数据手册

December 2009

MJD122

NPN Silicon Darlington Transistor

Features

• D-PAK for Surface Mount Applications

• High DC Current Gain

Equivalent Circuit

• Built-in a Damper Diode at E-C

• Lead Formed for Surface Mount Applications

• Electrically Similar to Popular TIP122

D-PAK

• Complement to MJD127

1.Base 2.Collector 3.Emitter

R1 ≅ 8kΩ

R2 ≅ 0.12kΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

100

I_CP

I_B

120

°C

P_C

Collector Dissipation (T_C=25°C)

Collector Dissipation (T_A=25°C)

Junction Temperature

1.75

150

T_J

T_STG

Storage Temperature

- 65 to 150

Electrical Characteristics T_A=25°C unless otherwise noted

Symbol

Parameter

Test Condition

I_C= 30mA, I_B= 0

V_CE= 50V, I_B=0

V_CB= 100V, I_E= 0

V_EB= 5V, I_C= 0

Min.

Max.

Units

V_CEO(sus) *Collector-Emitter Sustaining Voltage

100

I_CEO

I_CBO

I_EBO

h_FE

Collector Cut-off Current

Emitter Cut-off Current

*DC Current Gain

μA

V_CE= 4V, I_C= 4A

V_CE= 4V, V_EB= 8A

1000

100

12K

V_CE(sat)

*Collector-Emitter Saturation Voltage

I_C= 4A, I_B= 16mA

I_C= 8A, I_B= 80mA

V_BE(sat)

V_BE(on)

C_ob

*Base-Emitter Saturation Voltage

*Base-Emitter On Voltage

Output Capacitance

I_C= 8A, I_B= 80mA

V_CE= 4V, I_C= 4A

4.5

2.8

V_CB= 10V, I_E= 0

f= 0.1MHz

200

* Pulse Test: PW≤300μs, Duty Cycle≤2%

MJD122 Rev. B0

www.fairchildsemi.com

12 3 4 5

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