Datasheet > MJD122_07

MJD122_07

更新时间： 2024-11-02 04:15:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
9页	230K
描述
nullLow voltage power Darlington transistor

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MJD122_07 数据手册

MJD122

Low voltage power Darlington transistor

Features

■ Low base drive requirements

■ Integrated antiparallel collector-emitter diode

■ Through hole TO-251 (IPAK) power package in

tube (suffix “-1”)

■ Surface mounting TO-252 (DPAK) power

package in tape & reel (suffix “T4”)

TO-251

IPAK

TO-252

DPAK

Applications

(suffix “-1”)

(suffix “T4”)

■ General purpose switching and amplifier

Description

Figure 1.

Internal schematic diagram

The device is manufactured using Epitaxial-base

technology for high performance.

PNP type is MJD127.

R₁typ. =10 K

R₂typ. =150

Table 1.

Order code

MJD122T4

Device summary

Marking

Package

Packaging

MJD122

TO-252 (DPAK)

TO-251 (IPAK)

Tape & reel

Tube

MJD122-1

October 2007

Rev 10

1/9

www.st.com

12 3 4 5 6 7...9

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