Datasheet > MJD122_11

MJD122_11

更新时间： 2024-11-02 10:55:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	126K
描述
Complementary Darlington Power Transistor

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中文翻译

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MJD122_11 数据手册

MJD122 (NPN)

MJD127 (PNP)

Complementary Darlington

Power Transistor

DPAK For Surface Mount Applications

http://onsemi.com

Designed for general purpose amplifier and low speed switching

applications.

SILICON

POWER TRANSISTOR

8 AMPERES

100 VOLTS, 20 WATTS

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Surface Mount Replacements for 2N6040−2N6045 Series,

TIP120−TIP122 Series, and TIP125−TIP127 Series

COLLECTOR 2,4

• Monolithic Construction With Built−in Base−Emitter Shunt Resistors

• High DC Current Gain: h = 2500 (Typ) @ I = 4.0 Adc

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

BASE

Machine Model, C u 400 V

EMITTER 3

• Pb−Free Packages are Available

MARKING

DIAGRAM

MAXIMUM RATINGS

DPAK

CASE 369C

STYLE 1

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

100

Unit

Vdc

Adc

CEO

AYWW

J12xG

= Assembly Location

= Year

Collector Current − Continuous

− Peak

WW = Work Week

= 2 or 7

= Pb−Free Package

Base Current

120

mAdc

Total Power Dissipation @ T = 25°C

0.16

W/°C

Derate above 25°C

ORDERING INFORMATION

Total Power Dissipation (Note 1)

@ T = 25°C

1.75

0.014

W/°C

†

Device

Package

Shipping

Derate above 25°C

MJD122

DPAK

75 Units/Rail

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

°C

stg

MJD122G

DPAK

(Pb−Free)

THERMAL CHARACTERISTICS

Characteristic

MJD122T4

DPAK

2500/Tape & Reel

Symbol

Max

Unit

MJD122T4G

DPAK

(Pb−Free)

Thermal Resistance

6.25

°C/W

Junction−to−Case

DPAK

75 Units/Rail

MJD127

Thermal Resistance

71.4

°C/W

MJD127G

DPAK

(Pb−Free)

Junction−to−Ambient (Note1)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

MJD127T4

DPAK

2500/Tape & Reel

MJD127T4G

DPAK

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2011

Publication Order Number:

March, 2011 − Rev. 10

MJD122/D

12 3 4 5 6 7

中文翻译

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与MJD122_11相关器件

型号	品牌	获取价格	描述	数据表
MJD122-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
MJD122-1	STMICROELECTRONICS	获取价格	COMPLEMENTARY POWER DARLINGTON TRANSISTORS
MJD122-1	SAMSUNG	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD122-1G	ONSEMI	获取价格	8.0 A，100 V，NPN 达林顿双极功率晶体管
MJD122G	ONSEMI	获取价格	Complementary Darlington Power Transistor
MJD122NPN	CDIL	获取价格	COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD122R-HAF	SWST	获取价格	达林顿三极管
MJD122RLG	ONSEMI	获取价格	8.0 A，100 V，NPN 达林顿双极功率晶体管
MJD122T4	ONSEMI	获取价格	Complementary Darlington Power Transistor
MJD122T4	STMICROELECTRONICS	获取价格	COMPLEMENTARY POWER DARLINGTON TRANSISTORS

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