Datasheet > MJD122

MJD122

更新时间： 2024-11-03 22:30:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
6页	84K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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中文翻译

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数据手册
替代型号

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MJD122 数据手册

MJD122

MJD127

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

■

STMicroelectronics PREFERRED

SALESTYPES

■

LOW BASE-DRIVE REQUIREMENTS

INTEGRATED ANTIPARALLEL

COLLECTOR- EMITTER DIODE

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

■

ELECTRICAL SIMILAR TO TIP122 AND

TIP127

APPLICATIONS

DPAK

TO-252

(Suffix ”T4”)

■

GENERAL PURPOSE SWITCHING AND

AMPLIFIER.

DESCRIPTION

The MJD122 and MJD127 form complementary

NPN - PNP pairs.

They are manufactured using Epitaxial Base

technology for cost-effectiveperformance.

INTERNAL SCHEMATIC DIAGRAM

R₁Typ. = 10 KΩ

R₂Typ. = 150 Ω

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

PNP

MJD122

MJD127

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

100

I_CM

I_B

Collector Peak Current

Base Current

100

^oC

P_tot

T_stg

T_j

Total Dissipation at T_case≤ 25 C

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

For PNP types voltage and current values are negative.

1/6

January 1999

12 3 4 5 6

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MJD122 替代型号

型号	品牌	替代类型	描述	数据表
KSH122	FAIRCHILD	功能相似	D-PAK for Surface Mount Applications
MJD122T4	STMICROELECTRONICS	功能相似	COMPLEMENTARY POWER DARLINGTON TRANSISTORS

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型号	品牌	获取价格	描述	数据表
MJD122 TO-251	BL Galaxy Electrical	获取价格	100V,8A,General Purpose NPN Bipolar Transistor
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MJD122_05	ONSEMI	获取价格	Complementary Darlington Power Transistor
MJD122_07	STMICROELECTRONICS	获取价格	nullLow voltage power Darlington transistor
MJD122_09	FAIRCHILD	获取价格	NPN Silicon Darlington Transistor
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MJD122-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
MJD122-1	STMICROELECTRONICS	获取价格	COMPLEMENTARY POWER DARLINGTON TRANSISTORS
MJD122-1	SAMSUNG	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD122-1G	ONSEMI	获取价格	8.0 A，100 V，NPN 达林顿双极功率晶体管