Datasheet > MJD122

MJD122

更新时间： 2024-11-04 10:55:51

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
4页	632K
描述
NPN PLASTIC ENCAPSULATE TRANSISTORS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJD122 数据手册

MJD122

NPN PLASTIC ENCAPSULATE TRANSISTORS

P b

Lead(Pb)-Free

1.BASE

2.COLLECTOR

3.EMITTER

Features:

* High DC current gain

D-PAK(TO-252)

* Electrically similar to popular TIP122

* Built-in a damper diode at E-C

ABSOLUTE MAXIMUM RATINGS (T =25˚C)

Rating

Symbol

Value

Unit

Collector-Base Voltage

100

CBO

100

5.0

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CEO

EBO

Collector Power Dissipation

20.0

1.5

@T =25°C

Junction Temperature

+150

˚C

Storage Temperature Range

stg

-55 to +150

WEITRON

http://www.weitron.com.tw

1/4

13-Apr-07

12 3 4

中文翻译

下载PDF

与MJD122相关器件

型号	品牌	获取价格	描述	数据表
MJD122 TO-251	BL Galaxy Electrical	获取价格	100V,8A,General Purpose NPN Bipolar Transistor
MJD122 TO-252	BL Galaxy Electrical	获取价格	100V,8A,General Purpose NPN Bipolar Transistor
MJD122_05	ONSEMI	获取价格	Complementary Darlington Power Transistor
MJD122_07	STMICROELECTRONICS	获取价格	nullLow voltage power Darlington transistor
MJD122_09	FAIRCHILD	获取价格	NPN Silicon Darlington Transistor
MJD122_11	ONSEMI	获取价格	Complementary Darlington Power Transistor
MJD122-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
MJD122-1	STMICROELECTRONICS	获取价格	COMPLEMENTARY POWER DARLINGTON TRANSISTORS
MJD122-1	SAMSUNG	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD122-1G	ONSEMI	获取价格	8.0 A，100 V，NPN 达林顿双极功率晶体管