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MJD122 PDF预览

MJD122

更新时间: 2024-11-05 14:51:47
品牌 Logo 应用领域
江苏长电/长晶 - CJ 晶体管
页数 文件大小 规格书
4页 808K
描述
TO-251

MJD122 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.07
Is Samacsys:NBase Number Matches:1

MJD122 数据手册

 浏览型号MJD122的Datasheet PDF文件第2页浏览型号MJD122的Datasheet PDF文件第3页浏览型号MJD122的Datasheet PDF文件第4页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-251-3L Plastic-Encapsulate Transistors  
TO-251-3L  
MJD122 TRANSISTORNPN)  
1.BASE  
FEATURES  
2.COLLECTOR  
3.EMITTER  
High DC Current Gain  
C
NPN  
Electrically Similar to Popular TIP122  
Built-in a Damper Diode at E-C  
B
R
1
R
2
E
typ. =5 K  
typ. =210  
R
1
Ω
R2  
Ω
ꢀꢁꢂꢃꢄꢅꢆ  
MJD122ꢀ'ꢁ#ꢂ"ꢁꢃ"ꢄꢅꢁꢃ  
ꢆꢄꢇꢂꢅꢃꢅꢄꢈꢀꢉꢊꢁꢁ ꢃ!ꢄꢇꢅꢂ  ꢃ"ꢄ!ꢋꢄꢌ ꢅꢃꢅꢁ#ꢂ"ꢁ$ꢃ   
ꢂ(ꢃ ꢄ ꢁ$ꢈ)ꢁꢃ ꢄꢊ!ꢍꢇꢃꢅꢁ#ꢂ"ꢁ  
XXXX=Code  
MJD122  
XXXX  
MAXIMUM RATINGS (Ta=25 unless otherwise noted)  
Symbol  
Parameter  
Value  
100  
100  
5
Unit  
V
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
V
V
Collector Current -Continuous  
8
A
PC  
Collector Dissipation  
1.5  
W
Operation Junction and Storage Temperature Range  
-55-150  
TJ, Tstg  
www.jscj-elec.com  
1
Rev. - 2.1  

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