Datasheet > MBT3904DW1T1_05

MBT3904DW1T1_05

更新时间： 2024-11-14 03:50:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	106K
描述
Dual General Purpose Transistors

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中文翻译

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数据手册

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MBT3904DW1T1_05 数据手册

Vdc

Emitter

-ꢁBase Voltage

6.0

Vdc

Collector

CEO

CBO

MBT3904DW1T1,

MBT3904DW2T1

Dual General Purpose

Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a

spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is

designed for general purpose amplifier applications and is housed in

the SOT-363 six-leaded surface mount package. By putting two

discrete devices in one package, this device is ideal for low-power

surface mount applications where board space is at a premium.

http://onsemi.com

MARKING

DIAGRAM

SOT-363/SC-88/

SC70-6

CASE 419B

XX MG

Features

•ꢀh , 100-300

•ꢀLow V

, ≤ 0.4 V

CE(sat)

XX =MA for MBT3904DW1T1

MJ for MBT3904DW2T1

M =Date Code

•ꢀSimplifies Circuit Design

•ꢀReduces Board Space

= Pb-Free Package

(Note: Microdot may be in either location)

•ꢀReduces Component Count

•ꢀAvailable in 8 mm, 7-inch/3,000 Unit Tape and Reel

•ꢀPb-Free Packages are Available

(3)

(2)

(1)

MAXIMUM RATINGS

Rating

-ꢁEmitter Voltage

-ꢁBase Voltage

Symbol

Value

Unit

Vdc

(4)

(5)

(6)

EBO

MBT3904DW1T1

STYLE 1

Collector Current - Continuous

Electrostatic Discharge

200

mAdc

ESD

HBM Class 2

MM Class B

(3)

(2)

(1)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERAML CHARACTERISTICS

(4)

(5)

(6)

Characteristic

Symbol

Max

Unit

MBT3904DW2T1

STYLE 27

Total Package Dissipation (Note 1)

T = 25°C

150

Thermal Resistance,

Junction-to-Ambient

833

°C/W

°C

ORDERING INFORMATION

†

Device

Shipping

Package

Junction and Storage

Temperature Range

T , T

-ꢁ55 to +150

stg

MBT3904DW1T1

3000 Units/Reel

SOT-363

MBT3904DW1T1G

SOT-363

(Pb-Free)

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

MBT3904DW2T1

3000 Units/Reel

SOT-363

MBT3904DW2T1G

SOT-363

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

May, 2005 - Rev. 5

Publication Order Number:

MBT3904DW1T1/D

12 3 4 5 6 7

中文翻译

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与MBT3904DW1T1_05相关器件

型号	品牌	获取价格	描述	数据表
MBT3904DW1T1G	ONSEMI	获取价格	Dual General Purpose Transistors
MBT3904DW1T2	ONSEMI	获取价格	200mA, 40V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-88, 6 PIN
MBT3904DW1T3	ONSEMI	获取价格	双 NPN 双极晶体管
MBT3904DW1T3G	ONSEMI	获取价格	双 NPN 双极晶体管
MBT3904DW2	ONSEMI	获取价格	Dual General Purpose Transistors
MBT3904DW2T1	ONSEMI	获取价格	Dual General Purpose Transistors
MBT3904DW2T1G	ONSEMI	获取价格	Dual General Purpose Transistors
MBT3904DW-G	WEITRON	获取价格	Transistor
MBT3906DW	WEITRON	获取价格	Dual General Purpose Transistor PNP+PNP Silicon
MBT3906DW1	ONSEMI	获取价格	Dual General Purpose Transistor

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