Datasheet > MBT3946DW1T1

MBT3946DW1T1

更新时间： 2024-11-14 03:50:11

品牌	Logo	应用领域
ETL		晶体晶体管
页数	文件大小	规格书
10页	720K
描述
Dual General Purpose Transistors

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中文翻译

获取价格

数据手册

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MBT3946DW1T1 数据手册

Dual General Purpose Transistors

MBT3904DW1T1

MBT3906DW1T1

MBT3946DW1T1

The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are

spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed

for general purpose amplifier applications and are housed in the SOT–363 six–leaded

surface mount package. By putting two discrete devices in one package, these devices

are ideal for low–power surface mount applications where board space is at a premium.

• h _FE, 100–300

• Low V_CE(sat), 3 0.4 V

• Simplifies Circuit Design

• Reduces Board Space

See Table

• Reduces Component Count

• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

SOT–363/SC–88

CASE 419B STYLE 1

Q₂

Q₁

MBT3946DW1T1

MBT3904DW1T1

MAXIMUM RATINGS

MBT3906DW1T1

*Q ₁same as MBT3906DW1T1

Q ₂same as MBT3904DW1T1

Rating

Symbol

Voltage

Unit

Collector–Emitter Voltage

V _CEO

MBT3904DW1T1 (NPN)

MBT3906DW1T1 (PNP)

Collector–Base Voltage

MBT3904DW1T1 (NPN)

MBT3906DW1T1 (PNP)

Emitter–Base Voltage

–40

V _CBO

V _EBO

I _C

–40

MBT3904DW1T1 (NPN)

MBT3906DW1T1 (PNP)

6.0

–5.0

Collector Current

-Continuous

mAdc

MBT3904DW1T1 (NPN)

MBT3906DW1T1 (PNP)

Electrostatic Discharge

200

–200

ESD

HBM>16000,

MM>2000

THERMAL CHARACTERISTICS

ORDERING INFORMATION

Device

Package

SOT–363

Shipping

Characteristic

Symbol

Max

Unit

MBT3904DW1T1

MBT3906DW1T1

MBT3946DW1T1

3000 Units/Reel

Total Device Dissipation(1)

T_A= 25°C

P _D

150

Thermal Resistance,

Junction to Ambient

Junction and Storage

Temperature

R _θJA

833

°C/W

°C

T _J, T _stg

–55 to +150

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.

MBT3904–1/12

12 3 4 5 6 7...10

中文翻译

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