Datasheet > MBT6517LT1

MBT6517LT1

更新时间： 2024-11-14 12:47:27

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管高压
页数	文件大小	规格书
1页	76K
描述
NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR

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MBT6517LT1 数据手册

RoHS

MBT6517LT1

NP N EP ITAXIAL S ILICON TRANS IS TOR

HIGH VOLTAGE TRANSISTOR

Collector Dissipation: Pc=225mW(Ta=25 )

Collector-Emitter Voltage :Vceo=350V

ABSOLUTE MAXIMUM RATINGS at Ta=25

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

Vcbo

Vceo

Vebo

Rating

350

1.BASE

2.4

1.3

2.EMITTER

3.COLLECTOR

500

250

Base Current

Collector Dissipation Ta=25

P_D

225

Junction Temperature

Storage Temperature

150

Unit:mm

Tstg

-55-150

ELECTRICAL CHARACTERISTICS at Ta=25

Characteristic

Symbol Min

Typ

Max Unit

Test Conditions

Ic=100uA Ie=0

Ic= 1mA Ib=0

Collector-Base Breakdown Voltage

BVcbo

Bvceo

350

Collector-Emitter

Voltage#

Breakdown

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

BVebo

Icbo

Ie= 10uA Ic=0

Vcb= 250V Ie=0

Veb=5V Ic=0

Iebo

Hfe1

Hfe2

Hfe3

Hfe4

Hfe5

Vce=10V Ic=1mA

Vce=10V Ic=10mA

Vce=10V Ic=30mA

Vce=10V Ic=50mA

Vce=10V Ic=100mA

Ic=10mA Ib=1mA

Ic=30mA Ib=3mA

Ic=10mA Ib=1mA

Ic=30mA Ib=3mA

Vce=10V Ic=100mA

DC Current Gain

200

DC Current Gain

Collector-Emitter Saturation Voltage Vce(sat)

0.3

0.5

0.75

0.9

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Vbe(sat)

Vbe(on)

f_T

Current Gain Bandwidth Product

200

MHz Vce=20V Ic=10mA

F=20MHz

Collect Base Capacitance

Emitter Base Capacitance

Ccb

Ceb

Vcb=20V Ie=0 f=1MHz

Veb=0.5V f=1.00MHz

WEJ ELECTRONIC CO.,LTD

Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25

Pulse Test : Pulse Width 300uS,Duty cycle 2%

DEVICE MARKING: MMBT6517LT=1Z

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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