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MBTA05

更新时间: 2024-11-23 11:11:15
品牌 Logo 应用领域
强茂 - PANJIT 晶体晶体管高压
页数 文件大小 规格书
5页 204K
描述
NPN AND PNP HIGH VOLTAGE TRANSISTOR

MBTA05 数据手册

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MMBTA05,MMBTA06,MMBTA55,MMBTA56  
NPN AND PNP HIGH VOLTAGE TRANSISTOR  
POWER  
225 mWatts  
60~80 Volts  
VOLTAGE  
FEATURES  
• NPN and PNP silicon, planar design  
• Collector current IC = 100mA  
In compliance with EU RoHS 2002/95/EC directives  
MECHANICAL DATA  
• Case: SOT-23, Plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 0.008 gram  
• Marking :  
M M B TA 05=B 05 M M B TA 06=B 06  
M M B TA 55=B 55 M M B TA 56=B 56  
MAXIMUM RATINGS  
PARAMETER  
SYMBOL MMBTA05 MMBTA55 MMBTA06 MMBTA56 UNITS  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Circuit Figure  
VCEO  
VCBO  
VEBO  
IC  
60  
60  
80  
80  
V
V
4.0  
V
500  
mA  
NPN  
PNP  
NPN  
PNP  
THERMAL CHARACTERISTICS  
CHARACTERISTIC  
SYMBOL  
MAX  
UNIT  
mW  
Total Device Dissipation FR-5 Board (Note 1)T  
A
=25OC  
225  
1.8  
P
D
Derate above 25 O  
C
mW/OC  
Thermal Resistance , Junction to Ambient  
RθJA  
556  
OC/W  
Total Device Dissipation Alumina Substrate (Note 2)T  
A
=25OC  
300  
2.4  
mW  
P
D
Derate above 25 O  
C
mW/OC  
Thermal Resistance , Junction to Ambient  
Junction and Storage Temperature  
RθJA  
417  
OC  
OC  
T
J
,TSTG  
-55 to 150  
NPN  
PNP  
1.FR-4=70 x 60 x 1mm.  
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina  
STAD-NOV.30.2005  
PAGE . 1  

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