Datasheet > MBTA06LT1

MBTA06LT1

更新时间： 2024-11-14 12:47:27

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	70K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

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数据手册

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MBTA06LT1 数据手册

RoHS

MBTA06LT1

NP N EP ITAXIAL S ILICON TRANS IS TOR

High Collector-Emitter Voltage:Vcbo=80V

Collector Current: Ic=500mA

Collector Dissipation: Pc=225mW(Ta=25 )

1.BASE

ABSOLUTE MAXIMUM RATINGS at Ta=25

2.4

1.3

2.EMITTER

3.COLLECTOR

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

Vcbo

Vceo

Veb

Rating

Unit

Unit:mm

500

225

Collector Dissipation Ta=25

P_D

Junction Temperature

Storage Temperature

150

Tstg

-55-150

ELECTRICAL CHARACTERISTICS at Ta=25

Characteristic

Symbol Min

Typ

Max Unit

Test Conditions

Collector-Base Breakdown Voltage

BVcbo

BVceo

Ic=100uA Ie=0

Ic= 1mA Ib=0

Collector-Emitter

Voltage#

Breakdown

Emitter-Base Breakdown Voltage

Collector Cutoff Current

DC Current Gain

BVebo

Icbo

Ie= 100uA Ic=0

Vcb= 80V Ie=0

Vce= 60V Ib= 0

Vce=1V Ic=10mA

Vce=1V Ic=100mA

Ic=100mA Ib=10mA

Ic=100mA Vce=1V

100

250

Ices

Hfe₁

Hfe₂

DC Current Gain

Collector-Emitter Saturation Voltage Vce(sat)

0.25

1.2

Base-Emitter On Voltage

Vbe(on)

f_T

Current Gain-Bandwidth Product

100

MHz Vce=2V Ic=10mA

f=100MHz

Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25

Pulse Test : Pulse Width 300uS,Duty cycle 2%

DEVICE MARKING:

MMBTA06LT1=1G

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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