Datasheet > MBT6429DW1T1_05

MBT6429DW1T1_05

更新时间： 2024-09-26 03:50:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
5页	80K
描述
Amplifier Transistors NPN Silicon

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MBT6429DW1T1_05 数据手册

MBT6429DW1T1

Amplifier Transistors

NPN Silicon

Features

• Pb−Free Package is Available

http://onsemi.com

(3)

(2)

(1)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

Vdc

CEO

CBO

EBO

Collector−Base Voltage

Emitter−Base Voltage

6.0

200

Vdc

(4)

(5)

(6)

Collector Current − Continuous

mAdc

THERMAL CHARACTERISTICS

SC−88

(SOT−363)

Characteristic

Symbol

Max

Unit

Total Device Dissipation (Note 1)

419B

T = 25°C

150

833

Thermal Resistance,

Junction−to−Ambient

°C/W

°C

MARKING DIAGRAM

Junction and Storage Temperature

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1T M G

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended foot print.

= Specific Device Code

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

MBT6429DW1T1

SC−88

3000/Tape & Reel

MBT6429DW1T1G

SC−88

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 2

MBT6429DW1T1/D

12 3 4 5

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