Datasheet > MBT6429DW1T1G

MBT6429DW1T1G

更新时间： 2024-11-22 22:30:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
6页	153K
描述
Amplifier Transistors

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中文翻译

获取价格

数据手册
替代型号

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MBT6429DW1T1G 数据手册

MBT6429DW1T1

Amplifier Transistors

NPN Silicon

Features

• Pb−Free Package is Available

http://onsemi.com

MAXIMUM RATINGS

(3)

(2)

(1)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Symbol 6429DW1T1 Unit

Vdc

CEO

CBO

EBO

Emitter−Base Voltage

6.0

200

Vdc

Collector Current − Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

(4)

(5)

(6)

Symbol

Max

Unit

MARKING

DIAGRAM

Total Device Dissipation (Note 1)

T = 25°C

150

833

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

°C/W

°C

T , T

−55 to +150

stg

1. Device mounted on FR4 glass epoxy printed circuit board using the mini-

mum recommended foot print.

SC−88 (SOT−363)

419B

= Specific Device Code

= Date Code

ORDERING INFORMATION

†

Device

Package

Shipping

MBT6429DW1T1

SC−88

3000 /

Tape & Reel

MBT6429DW1T1G

SC−88

3000 /

(Pb−Free)

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

April, 2004 − Rev. 1

MBT6429DW1T1/D

12 3 4 5 6

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MBT6429DW1T1G 替代型号

型号	品牌	替代类型	描述	数据表
MBT6429DW1T1	ONSEMI	完全替代	Amplifier Transistors

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