Datasheet > MBT5012

MBT5012

更新时间： 2024-09-27 01:09:59

品牌	Logo	应用领域
IRI		/
页数	文件大小	规格书
4页	332K
描述
BRIDGE RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBT5012 数据手册

3 - O BRIDGE

RECTIFIER

INTERNATIONAL

(G) 50/16

MBT

FEATURES

High thermal conductivity

Packge,electrically insulated case

Centre hole fixing

Glass passivated chips

High I^FSM

Epoxy compound has classification UL94V-O

TYPICAL APPLICATIONS

Big power supplies

Field supply for DC motor

TECHNICAL DATA

DEVICE TYPE

V_RSM

(V)

V_RRM

(V)

MBT5010

MBT5012

1000

1100

1200

1300

5014

1400

1600

1500

1700

MBT

MBT5016

Maximum Ratings

Symbol

Item

Conditions

Values

Units

Average forward output current

Tc=80ć

I^F(AV)

t=8.3ms Single Half-Sine-Wave

Superimposed On Rated Load

(JEDEC METHOD)

Forward surge current, max.

500

I^FSM

i²t

t=8.3mS VR=0

1000

2500

A²s

Value for fusing

a.c.50HZ;r.m.s.;1min

Tj=25ć

Tj=125ć

Isolation Breakdown Voltage(R.M.S)

Visol

Operating Junction Temperature

Storage Temperature

Tvj

Tstg

-55 to +150

Weight

Mounting Torque

Bridge(Approximately)

N.m

www.rectifierindia.com

April 2011

12 3 4

中文翻译

下载PDF

与MBT5012相关器件

型号	品牌	获取价格	描述	数据表
MBT5014	IRI	获取价格	BRIDGE RECTIFIER
MBT5016	IRI	获取价格	BRIDGE RECTIFIER
MBT5401	ETC	获取价格	SILICON P-N-P HIGH-VOLTAGE TRANSISTOR
MBT5SS	ETC	获取价格	Features & Benefits
MBT6429DW1T1	ONSEMI	获取价格	Amplifier Transistors
MBT6429DW1T1_05	ONSEMI	获取价格	Amplifier Transistors NPN Silicon
MBT6429DW1T1G	ONSEMI	获取价格	Amplifier Transistors
MBT6517LT1	WINNERJOIN	获取价格	NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR
MBT673	FUJITSU	获取价格	16-Bit Proprietary Microcontroller
MBT678	FUJITSU	获取价格	16-Bit Proprietary Microcontroller