Datasheet > MBT5401

MBT5401

更新时间： 2024-11-13 21:55:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管高压
页数	文件大小	规格书
1页	38K
描述
SILICON P-N-P HIGH-VOLTAGE TRANSISTOR

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MBT5401 数据手册

MBT5401

SILICON P-N-P HIGH-VOLTAGE TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

Descriptions

Symbol

Min. Typ. Max. Unit

Storage Temperature

stg

150

250 mW

Junction Temperature

1. BASE

Maximum Power Dissipation (Ta=25

Maximum Collector to Base Voltage

)

tot

3. EMITTER

2. COLLECTOR

160

150

CBO

Maximum Collector to Emitter Voltage

Maximum Emitter to Base Voltage

Maximum Collector Current

CEO

EBO

Type

SOT-23

500 mA

Color Code

Marking

Black

MBT5401

(

ELECTRICAL CHARACTERISTICS Ta 25

)

Descriptions

Test Conditions

Symbol

Typ.

Min.

Max.

240

Unit

5V,

I_C

V_CE

1mA

FE1

5V,

I_C

10mA

DC Current Gain

FE2

V_CE5V, I_C

50mA

10mA

FE3

Gain Bandwidth product

Output Capacitance

V_CE

10V,

I_C

100

MHz

V_CB10V, I_E0mA,

1MHz

8.0

0.2

0.5

120V,

V_CB

I_C

I_E0mA

Collector Cut-off Current

CBO

120V,

10mA,

50mA,

10mA,

50mA,

100uA

1mA,

0mA,

I_E

amb

150 C

1mA

I_B

Collector Saturation Voltage

(

CE Sat

)

I_C

I_B5mA

1mA

I_C

I_B

Base Saturation Voltage

(

BE Sat

)

I_C

I_B

5mA

Collector to Base Breakdown Voltage

I_C

I_E

I_B

I_E

160

150

CBO

CEO

Collector to Emitter Breakdown Voltage I_C

Emitter to Base Breakdown Voltage

Small-Signal Current Gain

I_C

0mA,

10uA

1mA,

EBO

10V,

1kHz

V_CB

200

Pulse Test 300 S, Duty Cycle. 2%

THERMAL CHARACTERISTICS

Descriptions

Symbol

Typ.

Min.

Max.

Unit

K/W

( )

Thermal Resistance at T P R_{th j-t}+R_{th t-s}+R_{th s-a}+T_amb

R_{th j-a}

500

P / N

Marking

MBT5401

TEL:(852)23413351 FAX:(852)27978275

WEB SITE:http://www.daiwahk.com

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