Datasheet > MBT3904DW2

MBT3904DW2

更新时间： 2024-09-27 01:17:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	102K
描述
Dual General Purpose Transistors

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中文翻译

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数据手册

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MBT3904DW2 数据手册

MBT3904DW1,

MBT3904DW2,

SMBT3904DW1,

NSVMBT3904DW1

Dual General Purpose

Transistors

www.onsemi.com

MARKING

DIAGRAM

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of

our popular SOT−23/SOT−323 three−leaded device. It is designed for

general purpose amplifier applications and is housed in the SOT−363

six−leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low−power surface mount

applications where board space is at a premium.

SOT−363/SC−88/

SC70−6

CASE 419B

XX MG

Features

XX=MA for MBT3904DW1T1G

MJ for MBT3904DW2T1G

M =Date Code

• h , 100−300

• Low V

, ≤ 0.4 V

CE(sat)

= Pb−Free Package

(Note: Microdot may be in either location)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

(3)

(2)

(1)

• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

(4)

(5)

(6)

MBT3904DW1T1

STYLE 1

MAXIMUM RATINGS

(3)

(2)

(1)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

Vdc

6.0

Vdc

Collector Current − Continuous

Electrostatic Discharge

200

mAdc

(4)

(5)

(6)

ESD

HBM Class 2

MM Class B

MBT3904DW2T1

STYLE 27

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

†

Device

Shipping

Package

THERMAL CHARACTERISTICS

MBT3904DW1T1G,

MBT3904DW2T1G

3000 /

SOT−363

(Pb−Free)

Characteristic

Symbol

Max

Unit

Tape & Reel

3000 /

Total Package Dissipation (Note 1)

T = 25°C

150

SMBT3904DW1T1G

SOT−363

(Pb−Free) Tape & Reel

Thermal Resistance,

Junction−to−Ambient

833

°C/W

°C

NSVMBT3904DW1T3G

10000 /

Tape & Reel

SOT−363

(Pb−Free)

Junction and Storage

Temperature Range

T , T

−55 to +150

stg

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

Publication Order Number:

June, 2015 − Rev. 11

MBT3904DW1T1/D

12 3 4 5 6 7 8

中文翻译

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与MBT3904DW2相关器件

型号	品牌	获取价格	描述	数据表
MBT3904DW2T1	ONSEMI	获取价格	Dual General Purpose Transistors
MBT3904DW2T1G	ONSEMI	获取价格	Dual General Purpose Transistors
MBT3904DW-G	WEITRON	获取价格	Transistor
MBT3906DW	WEITRON	获取价格	Dual General Purpose Transistor PNP+PNP Silicon
MBT3906DW1	ONSEMI	获取价格	Dual General Purpose Transistor
MBT3906DW1_13	ONSEMI	获取价格	Dual General Purpose Transistor
MBT3906DW1T1	ETL	获取价格	Dual General Purpose Transistors
MBT3906DW1T1	LRC	获取价格	Dual General Purpose Transistors
MBT3906DW1T1	ONSEMI	获取价格	Dual General Purpose Transistor
MBT3906DW1T1	MOTOROLA	获取价格	200mA, 40V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR

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