Datasheet > MBT3906DW1

MBT3906DW1

更新时间： 2024-09-27 01:11:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	132K
描述
Dual General Purpose Transistor

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中文翻译

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MBT3906DW1 数据手册

MBT3906DW1,

SMBT3906DW1

Dual General Purpose

Transistor

The MBT3906DW1 device is a spin−off of our popular

SOT−23/SOT−323 three−leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT−363

six−leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low−power surface mount

applications where board space is at a premium.

http://onsemi.com

Features

SOT−363/SC−88

CASE 419B

STYLE 1

• h , 100−300

• Low V

, ≤ 0.4 V

CE(sat)

• Simplifies Circuit Design

(3)

(2)

(1)

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

(4)

(5)

(6)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MARKING DIAGRAM

MAXIMUM RATINGS

Rating

Symbol

Value

−40

Unit

Vdc

A2 M G

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

CBO

EBO

−40

Vdc

−5.0

−200

Vdc

A2 = Device Code

M = Date Code

Collector Current − Continuous

Electrostatic Discharge

mAdc

= Pb−Free Package

ESD

HBM Class 2

MM Class B

(Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

Device

Package

Shipping

THERMAL CHARACTERISTICS

MBT3906DW1T1G

SOT−363

(Pb−Free)

3,000 /

Tape & Reel

Characteristic

Symbol

Max

Unit

MBT3906DW1T2G

SOT−363

(Pb−Free)

3,000 /

Tape & Reel

Total Package Dissipation (Note 1)

T = 25°C

150

SMBT3906DW1T1G SOT−363

(Pb−Free)

3,000 /

Tape & Reel

Thermal Resistance,

Junction−to−Ambient

833

°C/W

°C

Junction and Storage

Temperature Range

T , T

−55 to +150

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

stg

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

July, 2013 − Rev. 5

MBT3906DW1T1/D

12 3 4 5 6

中文翻译

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与MBT3906DW1相关器件

型号	品牌	获取价格	描述	数据表
MBT3906DW1_13	ONSEMI	获取价格	Dual General Purpose Transistor
MBT3906DW1T1	ETL	获取价格	Dual General Purpose Transistors
MBT3906DW1T1	LRC	获取价格	Dual General Purpose Transistors
MBT3906DW1T1	ONSEMI	获取价格	Dual General Purpose Transistor
MBT3906DW1T1	MOTOROLA	获取价格	200mA, 40V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MBT3906DW1T1G	ONSEMI	获取价格	Dual General Purpose Transistor
MBT3906DW1T1G_09	ONSEMI	获取价格	Dual General Purpose Transistor
MBT3906DW1T2	ONSEMI	获取价格	200mA, 40V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-88, 6 PIN
MBT3906DW1T2	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
MBT3906DW1T2G	ONSEMI	获取价格	Dual General Purpose Transistor

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