Datasheet > MBT3906DW1T1G_09

MBT3906DW1T1G_09

更新时间： 2024-11-14 11:11:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	174K
描述
Dual General Purpose Transistor

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中文翻译

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MBT3906DW1T1G_09 数据手册

MBT3906DW1T1G

Dual General Purpose

Transistor

The MBT3906DW1T1G device is a spin−off of our popular

SOT−23/SOT−323 three−leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT−363

six−leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low−power surface mount

applications where board space is at a premium.

http://onsemi.com

(3)

(2)

(1)

Features

• h , 100−300

• Low V

, ≤ 0.4 V

• Simplifies Circuit Design

CE(sat)

(4)

(5)

(6)

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

SOT−363/SC−88

CASE 419B

STYLE 1

Rating

Symbol

Value

−40

Unit

Vdc

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

CBO

EBO

−40

Vdc

MARKING DIAGRAM

−5.0

−200

Vdc

Collector Current − Continuous

Electrostatic Discharge

mAdc

ESD

HBM Class 2

MM Class B

A2 M G

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

A2 = Device Code

M = Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Package Dissipation (Note 1)

150

T = 25°C

ORDERING INFORMATION

Thermal Resistance,

Junction−to−Ambient

833

°C/W

°C

†

Device

Package

Shipping

Junction and Storage

Temperature Range

T , T

−55 to +150

MBT3906DW1T1G SOT−363

(Pb−Free)

3000 /

stg

Tape & Reel

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

October, 2009 − Rev. 3

MBT3906DW1T1/D

12 3 4 5 6

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与MBT3906DW1T1G_09相关器件

型号	品牌	获取价格	描述	数据表
MBT3906DW1T2	ONSEMI	获取价格	200mA, 40V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-88, 6 PIN
MBT3906DW1T2	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
MBT3906DW1T2G	ONSEMI	获取价格	Dual General Purpose Transistor
MBT3906DW1T3	ONSEMI	获取价格	200mA, 40V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-88, 6 PIN
MBT3946DW	WEITRON	获取价格	Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW1T1	MOTOROLA	获取价格	200mA, 40V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
MBT3946DW1T1	ETL	获取价格	Dual General Purpose Transistors
MBT3946DW1T1	ONSEMI	获取价格	Dual General Purpose Transistor
MBT3946DW1T1	LRC	获取价格	Dual General Purpose Transistors
MBT3946DW1T1G	ONSEMI	获取价格	Dual General Purpose Transistor

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