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MBT3946DW1T1 PDF预览

MBT3946DW1T1

更新时间: 2024-10-27 22:20:23
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
10页 423K
描述
Dual General Purpose Transistors

MBT3946DW1T1 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.19Is Samacsys:N
最大集电极电流 (IC):0.2 A最小直流电流增益 (hFE):30
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN/PNP最大功率耗散 (Abs):0.15 W
子类别:BIP General Purpose Small Signal表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIED标称过渡频率 (fT):250 MHz
Base Number Matches:1

MBT3946DW1T1 数据手册

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LESHAN RADIO COMPANY, LTD.  
Dual General Purpose Transistors  
MBT3904DW1T1  
MBT3906DW1T1  
MBT3946DW1T1  
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are  
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed  
for general purpose amplifier applications and are housed in the SOT–363 six–leaded  
surface mount package. By putting two discrete devices in one package, these devices  
are ideal for low–power surface mount applications where board space is at a premium.  
h FE, 100–300  
6
5
4
Low VCE(sat) , 3 0.4 V  
Simplifies Circuit Design  
1
2
3
Reduces Board Space  
See Table  
Reduces Component Count  
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel  
SOT–363/SC–88  
CASE 419B STYLE 1  
6
Q2  
1
5
4
6
Q2  
1
6
Q2  
1
5
5
4
4
Q1  
Q1  
Q1  
3
2
3
3
2
2
MBT3946DW1T1  
MBT3904DW1T1  
MAXIMUM RATINGS  
MBT3906DW1T1  
*Q 1 same as MBT3906DW1T1  
Q 2 same as MBT3904DW1T1  
Rating  
Symbol  
Voltage  
Unit  
Collector–Emitter Voltage  
V CEO  
V
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
Collector–Base Voltage  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
Emitter–Base Voltage  
40  
–40  
V CBO  
V EBO  
I C  
V
V
60  
–40  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
6.0  
–5.0  
Collector Current  
-Continuous  
mAdc  
V
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
Electrostatic Discharge  
200  
–200  
ESD  
HBM>16000,  
MM>2000  
THERMAL CHARACTERISTICS  
ORDERING INFORMATION  
Device  
Package  
SOT–363  
SOT–363  
SOT–363  
Shipping  
Characteristic  
Symbol  
Max  
Unit  
MBT3904DW1T1  
MBT3906DW1T1  
MBT3946DW1T1  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
Total Device Dissipation(1)  
TA = 25°C  
P D  
150  
mW  
Thermal Resistance,  
Junction to Ambient  
Junction and Storage  
Temperature  
R θJA  
833  
°C/W  
°C  
T J , T stg  
–55 to +150  
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.  
MBT3904–1/12  

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