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MBT3904DW1T1 PDF预览

MBT3904DW1T1

更新时间: 2024-11-14 20:18:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
12页 277K
描述
200mA, 40V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

MBT3904DW1T1 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.17Is Samacsys:N
最大集电极电流 (IC):0.2 A基于收集器的最大容量:4 pF
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
功耗环境最大值:0.15 W认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsVCEsat-Max:0.3 V
Base Number Matches:1

MBT3904DW1T1 数据手册

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Order this document  
by MBT3904DW1T1/D  
SEMICONDUCTOR TECHNICAL DATA  
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are  
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed  
for general purpose amplifier applications and are housed in the SOT–363 six–leaded  
surface mount package. By putting two discrete devices in one package, these  
devices are ideal for low–power surface mount applications where board space is at  
a premium.  
MBT3904DW1T1  
MBT3906DW1T1  
MBT3946DW1T1  
h
, 100–300  
FE  
Low V  
, 0.4 V  
CE(sat)  
6
5
4
Simplifies Circuit Design  
Reduces Board Space  
1
2
3
Reduces Component Count  
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel  
CASE 419B–01, STYLE 1  
MBT3904DW1T1  
(3)  
(2)  
(1)  
Q
Q
Q
Q
1
2
2
2
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
(4)  
(5)  
(6)  
(1)  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
V
CEO  
V
CBO  
V
EBO  
40  
–40  
Vdc  
MBT3906DW1T1  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
60  
–40  
Vdc  
Vdc  
(3)  
(2)  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
6.0  
–5.0  
Q
1
Collector Current — Continuous  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
I
C
mAdc  
200  
–200  
(4)  
(5)  
(6)  
(1)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MBT3946DW1T1*  
(1)  
Total Package Dissipation  
= 25°C  
P
D
150  
mW  
(3)  
(2)  
T
A
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
R
833  
°C/W  
°C  
JA  
Q
1
T , T  
J stg  
55 to  
+150  
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum  
1. recommended footprint.  
(4)  
(5)  
(6)  
DEVICE MARKING  
*Q1 same as MBT3906DW1T1  
Q2 same as MBT3904DW1T1  
MBT3904DW1T1 = MA MBT3946DW1T1 = 46  
MBT3906DW1T1 = A2  
Thermal Clad is a trademark of the Bergquist Company.  
Motorola, Inc. 1996

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