Datasheet > MBT35200

MBT35200

更新时间： 2024-11-13 22:30:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体开关晶体管便携式
页数	文件大小	规格书
8页	85K
描述
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications

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MBT35200 数据手册

MBT35200MT1

High Current Surface

Mount PNP Silicon

Switching Transistor for

Load Management in

Portable Applications

http://onsemi.com

A Device of the mX Family

35 VOLTS

2.0 AMPS

PNP TRANSISTOR

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

–35

Unit

Vdc

Adc

COLLECTOR

1, 2, 5, 6

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

CEO

CBO

EBO

–55

–5.0

–2.0

–5.0

BASE

Collector Current — Continuous

Collector Current — Peak

Electrostatic Discharge

EMITTER

ESD

HBM Class 3

MM Class C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

T = 25°C

(Note 1.)

625

Derate above 25°C

5.0

mW/°C

°C/W

CASE 318G

TSOP

Thermal Resistance,

Junction to Ambient

(Note 1.)

200

STYLE 6

Total Device Dissipation

(Note 2.)

1.0

T = 25°C

Derate above 25°C

8.0

mW/°C

°C/W

DEVICE MARKING

Thermal Resistance,

Junction to Ambient

(Note 2.)

120

Thermal Resistance,

Junction to Lead #1

°C/W

G4 (date code)

Total Device Dissipation

(Single Pulse < 10 sec.)

1.75

Dsingle

(Notes 2. & 3.)

Junction and Storage

Temperature Range

T , T

–55 to

+150

°C

stg

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 X 1.0 inch Pad

3. ref: Figure 9

ORDERING INFORMATION

Device

Package

Shipping

MBT35200MT1 Case 318G 3000/Tape & Reel

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

August, 2000 – Rev. 1

MBT35200MT1/D

12 3 4 5 6 7 8

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