MBT3904DW

更新时间： 2024-11-14 03:50:11

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
7页	239K
描述
Dual General Purpose Transistor NPN+NPN Silicon

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中文翻译

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数据手册

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MBT3904DW 数据手册

MBT3904DW

Dual General Purpose Transistor

NPN+NPN Silicon

SOT-363(SC-88)

NPN+NPN

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

Emitter-Base Voltage

Collector Current-Continuous

6.0

200

Vdc

mAdc

EBO

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Total Device Dissipation TA=25 C

C/W

150

833

Thermal Resistance, Junction to Ambient

Junction and Storage,Temperature

J,Tstg

-55 to +150

Device Marking

MBT3904DW=MA

(TA=25 C Unless Otherwise noted)

Electrical Characteristics

Characteristics

Symbol

Unit

Min

Max

Off C haracteristics

(2)

Collector-Emitter Breakdown Voltage (I =1.0mAdc.IB=0)

V(BR)CEO

V(BR)CBO

Vdc

Collector-Base Breakdown Voltage (IC=10 uAdc, IE=0)

Emitter-Base Breakdown Voltage (IE=10 uAdc, IC=0)

Vdc

V(BR)EBO

IBL

6.0

Base Cutoff Current (VCE=30 Vdc,VEB =3.0 Vdc)

nAdc

Collector Cutoff Current (VCE=30Vdc,VEB=3.0Vdc)

ICEX

1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.

2. Pulse Test:Pulse Width 300uS, Duty Cycle 2.0%

WEITRON

http://www.weitron.com.tw

12 3 4 5 6 7

中文翻译

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