Datasheet > MBM300GR12A

MBM300GR12A

更新时间： 2024-11-23 20:03:07

品牌	Logo	应用领域
日立 - HITACHI		局域网栅功率控制晶体管
页数	文件大小	规格书
4页	76K
描述
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel,

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MBM300GR12A 数据手册

PDE-M300GR12A-0

Hitachi IGBT Module / Silicon N-Channel IGBT

MBM300GR12A

[Rated 300A/1200V, Dual-pack type]

FEATURES

OUTLINE DRAWING

• Low saturation voltage and high speed.

• Low turn-OFF switching loss.

• Low noise due to built-in free-wheeling diode.

(Ultra Soft and Fast recovery Diode (USFD))

• High reliability structure.

Unit in mm

110

4-Fast-on

Terminal #110

4- φ 6.5

C2E1 E2 C1

• Isolated heat sink (terminals to base).

CIRCUIT DIAGRAM

3-M6

46.5

φ 0.8

C2E1

Weight：460g

ABSOLUTE MAXIMUM RATINGS (T_C=25°C)

Item

Collector-Emitter Voltage

Gate-Emitter Voltage

Symbol

V_CES

V_GES

I_C

Unit

Value

1200

±20

300

Collector Current

Forward Current

1ms

I_CP

600

I_F

300

600

1ms

I_FM

Collector Power Dissipation

Junction Temperature

Storage Temperature

Isolation Voltage

P_C

°C

1980

T_j

-40 ~ +150

-40 ~ +125

T_stg

V_iso

V_RMS

2500(AC 1 minute)

Terminals

Mounting

2.94

Screw Torque

N·m

2.94

Notes; *1 : RMS current of diode ≤ 90 Arms

*2 ,*3 : Recommended value 2.45 N·m

CHARACTERISTICS (T_C=25°C)

Item

Symbol

Unit

Min.

Typ.

Max.

1.0

Test Conditions

V_CE=1200V, V_GE=0V

_GE=±20V, V_CE=0V

Collector-Emitter Cut-Off Current

Gate-Emitter Leakage Current

Collector-Emitter Saturation Voltage

Gate-Emitter Threshold Voltage

Input Capacitance

I_CES

I_GES

V_CE(sat)

V_GE(TO)

C_ies

t_r

±500

2.8

2.2

I_C=300A, V_GE=15V

V_CE=5V, I_C=300mA

24000

0.2

V_CE=10V, V_GE=0V, f=1MHz

Rise Time

0.5

0.7

0.3

1.1

0.4

3.5

_CC=600V, I_C=300A

Turn-On Time

Switching Times

t_on

0.35

0.1

R_G=3.9Ω

_GE=±15V

µs

Fall Time

t_f

Inductive Load

I_F=300A

Turn-Off Time

Reverse Recovery Time

t_off

0.7

t_rr

0.2

µs

Peak Forward Voltage Drop

V_FM

R_th(j-c)

2.5

I_F=300A, V_GE=0V

Junction to case

IGBT

Thermal Impedance

FWD

0.063

0.18

°C/W

Notes; *4 : R_Gvalue is the test condition’s value for decision of the switching times, not recommended value, please determine

the suitable R_Gvalue after the measurement of switching waveforms (overshoot voltage, etc.) with appliance

mounted.

Remark; For actual application,please confirm this spec.sheet is the newest revision.

12 3 4

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与MBM300GR12A相关器件

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MBM300GR6	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel,
MBM300GR6	RENESAS	获取价格	300A, 600V, N-CHANNEL IGBT
MBM300GS12AW	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES
MBM300GS12AW	RENESAS	获取价格	IGBT
MBM300GS6AW	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel,
MBM300GS6AW	RENESAS	获取价格	300A, 600V, N-CHANNEL IGBT
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