生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-X7 |
Reach Compliance Code: | compliant | 风险等级: | 5.26 |
其他特性: | HIGH RELIABILITY, LOW NOISE | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 300 A | 集电极-发射极最大电压: | 600 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 930 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 750 ns | 标称接通时间 (ton): | 350 ns |
VCEsat-Max: | 2.6 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MBM300GS12AW | HITACHI |
获取价格 |
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES | |
MBM300GS12AW | RENESAS |
获取价格 |
IGBT | |
MBM300GS6AW | HITACHI |
获取价格 |
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, | |
MBM300GS6AW | RENESAS |
获取价格 |
300A, 600V, N-CHANNEL IGBT | |
MBM30LV0032 | FUJITSU |
获取价格 |
32M (4M X 8) BIT NAND-type | |
MBM30LV0032-PFTN | FUJITSU |
获取价格 |
32M (4M X 8) BIT NAND-type | |
MBM30LV0032-PFTR | FUJITSU |
获取价格 |
32M (4M X 8) BIT NAND-type | |
MBM30LV0064 | FUJITSU |
获取价格 |
64M (8M X 8) BIT NAND-type | |
MBM30LV0064-PBT | FUJITSU |
获取价格 |
Flash, 8MX8, 35ns, PBGA52, PLASTIC, FBGA-52 | |
MBM30LV0064-PFTN | FUJITSU |
获取价格 |
64M (8M X 8) BIT NAND-type |