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MBM300GR6 PDF预览

MBM300GR6

更新时间: 2024-11-19 17:08:43
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网双极性晶体管功率控制
页数 文件大小 规格书
4页 67K
描述
300A, 600V, N-CHANNEL IGBT

MBM300GR6 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code:compliant风险等级:5.26
其他特性:HIGH RELIABILITY, LOW NOISE外壳连接:ISOLATED
最大集电极电流 (IC):300 A集电极-发射极最大电压:600 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):930 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):750 ns标称接通时间 (ton):350 ns
VCEsat-Max:2.6 VBase Number Matches:1

MBM300GR6 数据手册

 浏览型号MBM300GR6的Datasheet PDF文件第2页浏览型号MBM300GR6的Datasheet PDF文件第3页浏览型号MBM300GR6的Datasheet PDF文件第4页 
Spec. No.IGBT-SP-99021(R2)  
Hitachi IGBT Module / Silicon N-Channel IGBT  
MBM300GR6  
[Rated 300A/600V, Dual-pack type]  
FEATURES  
OUTLINE DRAWING  
· Low saturation voltage and high speed.  
Unit in mm  
· Low turn-OFF switching loss.  
92  
80  
20  
4-Fast-on  
Terminal #110  
· Low noise due to build-in free-wheeling diode.  
(Ultra Soft and Fast recovery Diode (USFD))  
· High reliability structure.  
2- φ 5.6  
19  
18.5  
· Isolated heat sink (terminals to base).  
CIRCUIT DIAGRAM  
E2  
C1  
C2E1  
G2  
E2  
23  
23  
3-M5  
40  
C1  
C2E1  
E2  
φ 0.8  
E1  
G1  
Weight : 230g  
ABSOLUTE MAXIMUM RATINGS(TC=25°C)  
Item  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
Symbol  
VCES  
VGES  
IC  
Unit  
V
Value  
600  
±20  
300  
600  
V
DC  
Collector Current  
Forward Current  
A
A
1ms  
DC  
ICP  
*1  
IF  
300  
600  
1ms  
IFM  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
Isolation Voltage  
PC  
W
°C  
°C  
930  
Tj  
-40 ~ +150  
-40 ~ +125  
Tstg  
Viso  
VRMS  
N·m  
(kgf·cm)  
2500(AC 1 minute)  
*2  
Terminals  
Mounting  
1.96(20)  
Screw Torque  
-
*3  
1.96(20)  
Notes; *1: RMS current of Diode £ 90 Arms  
*2, *3 : Recommended value 1.67 N·m (17 kgf·cm)  
CHARACTERISTICS (TC=25°C)  
Item  
Symbol  
ICES  
IGES  
VCE(sat)  
VGE(TO)  
Cies  
Unit  
mA  
nA  
V
Min.  
- -  
- -  
-
- -  
-
-
-
-
-
-
Typ.  
Max.  
1.0  
Test Conditions  
Collector-Emitter Cut-Off Current  
Gate-Emitter Leakage Current  
Collector-Emitter Saturation Voltage  
Gate-Emitter Threshold Voltage  
Input Capacitance  
VCE=600V, VGE=0V  
VGE=±20V, VCE=0V  
IC=300A, VGE=15V  
VCE=5V, IC=300mA  
±500  
2.6  
10  
-
2.1  
V
pF  
15000  
VCE=10V, VGE=0V, f=1MHz  
Rise Time  
tr  
0.25  
0.35  
0.2  
0.5  
VCC=300V  
RL=1.0W  
RG=8.2W  
VGE=±15V  
Turn-ON Time  
Switching Times  
ton  
0.7  
ms  
*4  
Fall Time  
tf  
0.32  
1.0  
Turn-Off Time  
Peak Forward Voltage Drop  
Reverse Recovery Time  
toff  
0.75  
1.6  
VFM  
trr  
V
2.2  
IF=300A, VGE=0V  
- -  
0.3  
ms  
IF=300A, VGE=-10V, di/dt=300A/ms  
IGBT  
Thermal Impedance  
FWD  
Rth(j-c)  
Rth(j-c)  
0.133  
0.28  
- -  
Junction to case  
°C/W  
Notes; *4:RG value is the test condition’s value for decision of the switching times, not recommended value, please determine  
the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.  
Remark; The specification given herein, is subject to change without prior notice to improve product characteristics.  

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