型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MBM300GS6AW | HITACHI |
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Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, | |
MBM300GS6AW | RENESAS |
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300A, 600V, N-CHANNEL IGBT | |
MBM30LV0032 | FUJITSU |
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32M (4M X 8) BIT NAND-type | |
MBM30LV0032-PFTN | FUJITSU |
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32M (4M X 8) BIT NAND-type | |
MBM30LV0032-PFTR | FUJITSU |
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32M (4M X 8) BIT NAND-type | |
MBM30LV0064 | FUJITSU |
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64M (8M X 8) BIT NAND-type | |
MBM30LV0064-PBT | FUJITSU |
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Flash, 8MX8, 35ns, PBGA52, PLASTIC, FBGA-52 | |
MBM30LV0064-PFTN | FUJITSU |
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64M (8M X 8) BIT NAND-type | |
MBM30LV0064-PFTR | FUJITSU |
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64M (8M X 8) BIT NAND-type | |
MBM30LV0128 | FUJITSU |
获取价格 |
128 M (16 M X 8) BIT NAND-type |