Datasheet > MBM600GS6CW

MBM600GS6CW

更新时间： 2024-11-19 21:13:55

品牌	Logo	应用领域
日立 - HITACHI		局域网栅
页数	文件大小	规格书
4页	124K
描述
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES

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中文翻译

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MBM600GS6CW 数据手册

IGBT MODULE

MBM600GS6CW

Silicon N-channel IGBT

OUTLINE DRAWING

Unit in mm

FEATURES

* High speed and low saturation voltage.

* low noise due to built-in free-wheeling

diode - ultra soft fast recovery diode(USFD).

* Isolated head sink (terminal to base).

C2E1

Weight: 540 (g)

TERMINALS

ABSOLUTE MAXIMUM RATINGS (Tc=25 C )

Item

Symbol

V_CES

Unit

MBM600GS6CW

600

Collector Emitter Voltage

Gate Emitter Voltage

Collector Current

V_GES

I_C

I_Cp

I_F

I_FM

T_j

T_stg

V_ISO

600

1,200

600

1,200

1,700

1ms

Forward Current

(1)

1ms

Collector Power Dissipation

J unction Temperature

Storage Temperature

Isolation Voltage

-40 ~ +150

-40 ~ +125

2,500(AC 1 minute)

7.84(80)

2.94(30)

V_RMS

Screw Torque

Terminals

Mounting

(2)

(3)

N.m

(kgf.cm)

Notes:(1)RMS Current of Diode 180Arms max.

(2)Recommended Value 7.35N.m(75kgf.cm)

(3)Recommended Value 2.45N.m(25kgf.cm)

CHARACTERISTICS (Tc=25 C )

Item

Symbol Unit Min. Typ. Max.

Test Conditions

1.0 V_CE=600V,V_GE=0V

500 V_GE= 20V,V_CE=0V

Collector Emitter Cut-Off Current

I _CES

Gate Emitter Leakage Current

I_GES

Collector Emitter Saturation Voltage

Gate Emitter Threshold Voltage

Input Capacitance

V_CE(sat)

V_GE(TO)

C_ies

t_r

t_on

t_f

1.9

30,000

0.35

0.4

2.5 I_C=600A,V_GE=15V

10 V_CE=5V, I_C=600mA

V_CE=10V,V_GE=0V,f=1MHz

Rise Time

0.7 V_CC=300V

Turn On Time

0.8 R =0.5

Switching Times

Fall Time

0.25

0.4 R =4.3

(4)

Turn Off Time

Peak Forward Voltage Drop

t_off

V_FM

0.8

2.2

1.1 V_GE= 15V

3.0 I_F=600A,V_GE=0V

Reverse Recovery Time

Thermal Impedance IGBT

FWD

t_rr

Rth(j-c)

0.3 I_F=600A,V_GE=-10V, di/dt=600A/ s

C/W

0.073

0.2

J unction to case

Notes:(4) R_Gvalue is the test condition’s value for decision of the switching times, not recommended value.

Determine the suitable R_Gvalue after the measurement of switching waveforms

(overshoot voltage,etc.)with appliance mounted.

PDE-M600GS6CW-0

12 3 4

中文翻译

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