Datasheet > MBM30LV0128-PFTR

MBM30LV0128-PFTR

更新时间： 2024-11-18 22:51:31

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MBM30LV0128-PFTR 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20885-1E

FLASH MEMORY

CMOS

128 M (16 M × 8) BIT NAND-type

MBM30LV0128

■ DESCRIPTION

The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages

× 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

store ECC code (Specifications indicated are on condition that ECC system would be combined) . Program and

read data is transferred between the memory array and page register in 528 byte increments. A 528 byte page

can be programmed in 200 µs and an 16 K byte block can be erased in 2 ms under typical conditions. An internal

controller automates all programs and erases operations including the verification of data margins. Data within a

page can be read with a 50 ns cycle time per byte. The I/O pins are utilized for both address and data input/output

as well as command inputs. The MBM30LV0128 is an ideal solution for applications requiring mass non-volatile

storage such as solid state file storage, digital recording, image file memory for still cameras, and other uses

which require high density and non-volatile storage.

■ PRODUCT LINE UP

Part No.

MBM30LV0128

−40 °C to +85 °C

+2.7 V to +3.6 V

72 mW

Operating Temperature

V^CC

Read

Erase / Program

72 mW

Power Dissipation (Max.)

TTL Standby

3.6 mW

CMOS Standby

0.18 mW

12 3 4 5 6 7...41

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