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MBM600E17E PDF预览

MBM600E17E

更新时间： 2024-11-19 20:56:03
品牌 Logo 应用领域
日立 - HITACHI 栅
页数 文件大小 规格书
2页 106K
描述
Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES

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MBM600E17E 数据手册

 浏览型号MBM600E17E的Datasheet PDF文件第2页 
IGBT MODULE  
Spec.No.IGBT-SP-07034 R1 P1  
TARGET SPEC.  
MBM600E17E  
Silicon N-channel IGBT 1700V E version  
OUTLINE DRAWING  
Unit in mm  
FEATURES  
* Soft switching behavior & low conduction loss:  
Soft low-injection punch-through with trench gate IGBT.  
* Low driving power: Low input capacitance  
advanced trench gate.  
* Low noise recovery: Ultra soft fast recovery diode.  
* High thermal fatigue durability  
:(delta Tc=70K, N 30,000cycles).  
* AlSiC base-plate/AlN substrate.  
CIRCUIT DIAGRAM  
E1  
C2  
C2  
E1  
G1  
G2  
E2  
C1  
C1  
E2  
Weight: 900(g)  
ABSOLUTE MAXIMUM RATINGS (T  
C=25  
)
Item  
Symbol  
Unit  
MBM600E17E  
Collector Emitter Voltage  
Gate Emitter Voltage  
V
V
CES  
GES  
V
V
1,700  
20  
600  
1,200  
600  
DC  
I
C
Collector Current  
1ms  
DC  
A
A
I
Cp  
IF  
Forward Current  
1ms  
I
FM  
1,200  
Junction Temperature  
Storage Temperature  
lsolation Voltage  
T
j
-40  
-40  
+125  
+125  
Tstg  
V
ISO  
V
RMS  
4,000(AC 1 minute)  
Terminals (M4/M8)  
Screw Torque  
-
-
2/15  
6
(1)  
(2)  
N·m  
(2) Recommended Value 5.5 0.5N·m  
Mounting (M6)  
+0  
Notes: (1) Recommended Value 1.8 0.2/15  
N·m  
-3  
ELECTRICAL CHARECTERISTICS  
Item  
Symbol Unit  
Min. Typ. Max.  
Test Conditions  
V
V
V
CE=1,700V, VGE=0V, T  
CE=1,700V, VGE=0V, T  
20V, VCE=0V, T  
=600A, VGE=15V, T =125  
CE=10V, I =60mA, T =25  
j
=25  
-
-
-
5.0  
17  
Collector Emitter Cut-Off Current  
I
CES  
mA  
j
=25  
5
Gate Emitter Leakage Current  
Collector Emitter Saturation Voltage  
Gate Emitter Threshold Voltage  
Input Capacitance  
I
GES  
nA  
V
GE  
=
j=25  
-
-
500  
V
CE(sat)  
I
C
j
-
2.2  
6.5  
50  
2.7  
8.0  
-
V
GE(TO)  
V
V
C
j
5.0  
-
C
ies  
nF  
V
CE=10V, VGE=0V,f=100kHz, Tj=25  
Internal Gate Resistance  
Rise Time  
Rg(int)  
-
3.0  
0.6  
1.4  
1.1  
1.9  
1.9  
0.4  
0.12  
0.32  
0.20  
-
t
r
-
1.2  
2.8  
2.2  
3.8  
2.5  
0.8  
0.18  
0.48  
0.30  
0.038  
0.060  
-
VCC=900V, Ic=600A,  
Ls=100nH, Rg(on/off)=6.8/1.5Ω  
Turn On Time  
Switching Times  
t
t
on  
-
µs  
(3)  
VGE= 15V, Tj=125oC  
Fall Time  
tf  
-
Turn Off Time  
Peak Forward Voltage Drop  
Reverse Recovery Time  
Turn On Loss  
off  
FM  
rr  
-
V
V
IF=600A, VGE=0V, Tj=125  
-
t
µs  
-
VCC=900V, Ic=600A,  
Ls=100nH, Rg(on/off)=6.8/1.5Ω  
Eon(10%)  
Eoff(10%)  
Err(10%)  
J/P  
J/P  
J/P  
-
(3)  
VGE= 15V, Tj=125oC  
Turn Off Loss  
Reverse Recovery Loss  
-
-
IGBT  
Thermal Resistance  
FWD  
Rth(j-c)  
Rth(j-c)  
Rth(c-f)  
K/W  
Junction to case  
-
-
-
Contact Thermal Resistance  
K/W  
0.016  
Case to fin (per 1 arm)  
Notes: (3) Rg value is the test condition's value for decision of the switching times, not recommended value.  
Please, determine the suitable Rg value after the measurement of switching waveforms  
(overshoot voltage, etc.)with appliance mounted.  
* Please contact our representatives at order.  
* For improvement, specifications are subject to change without notice.  
* For actual application, please confirm this spec sheet is the newest revision.  
12

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