Datasheet > MBM600F17D

MBM600F17D

更新时间： 2024-11-19 21:22:03

品牌	Logo	应用领域
日立 - HITACHI		栅
页数	文件大小	规格书
10页	1019K
描述
Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES

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MBM600F17D 数据手册

Dual IGBT Module

Spec.No.IGBT-SP-10006-R4 P1

PRELIMINARY SPECIFICATION

MBM600F17D

Silicon N-channel IGBT

FEATURES

* High speed, low loss IGBT module.

* Low driving power due to low input capacitance MOS gate.

* Low noise due to ultra soft fast recovery diode.

* Low thermal impedance due to direct liquid cooling.

* High reliability, high durability module.

* High thermal fatigue durability (delta Tc=70°C, N>30,000cycles)

ABSOLUTE MAXIMUM RATINGS (Tc=25^o

C )

Item

Symbol

V_CES

V_GES

I_C

I_Cp

I_F

I_FM

T_jmax

T_jop

T_stg

V_ISO

Unit

Specification

Collector Emitter Voltage

Gate Emitter Voltage

1,700

±20

600

1,200

600

1,200

1ms

Collector Current

Forward Current

1ms

Maximum Junction Temperature

Temperature under switching conditions

Storage Temperature

^oC

175

-40 ~ +150

-40 ~ +125

^oC

Isolation Voltage

V_RMS

4,000 (AC 50Hz, 1 minute)

Terminals (M6)

(1)

(2)

Screw Torque

N·m

Mounting (M5)

Notes: Recommended Value (1)5.5±0.5N·m (2)3.5±0.5N·m

ELECTRICAL CHARACTERISTICS

Item

Symbol Unit Min. Typ. Max.

Test Conditions

Vce=1,700V, Vge=0V, Tj=25^oC

Collector Emitter Cut-Off Current

I _CES

3.0

6.9

3.3

0.6

1.0

0.5

2.6

2.4

0.3

0.22

0.32

0.18

10 Vce =1,700V, Vge=0V, Tj=150^oC

+500 Vge=±20V, Vce=0V, Tj=25^oC

3.7 Ic=600A, Vge=15V, Tj=150^oC

7.6 Vce=10V, Ic=60mA, Tj=25^oC

Gate Emitter Leakage Current

Collector Emitter Saturation Voltage

Gate Emitter Threshold Voltage

Input Capacitance

I_GES

V_CE(sat)

V_GE(TO)

C_ies

Ω

-500

2.5

6.2

Vce=10V, Vge=0V, f=100kHz, Tj=25^oC

Internal Gate Resistance

g(int)

t_r

Rise Time

1.2 Vcc=1100V, Ic=600A

Ls=55nH,Cge=22nF

Turn On Time

Switching Times

t_on

t_f

t_off

2.0

1.2

5.2

µs

Rg(ON)=3.3Ω, Rg(OFF)=15Ω

Fall Time

Vge=±15V, Tj=150^oC

Turn Off Time

Peak Forward Voltage Drop

Reverse Recovery Time

Turn On Loss

V_FM

t_rr

E_on(10%)

E_off(10%)

E_rr(10%)

1.9

2.9 IF=600A, V_GE=0V, Tj=150^oC

0.6 V_CC=1100V, Ic=600A,

0.29

0.41

0.28

µs

J/P

Ls=55nH,Cge=22nF

Rg(ON)=3.3Ω, Rg(OFF)=15Ω

Turn Off Loss

Vge=±15V, Tj=150^oC

Reverse Recovery Loss

Vge≤15V, Vcc =1100V

Tw≤10us, Tj=150^oC

Junction to case/fin, 8l/min, 50%LLC

(per 1 arm)

Case/fin to water, 8l/min, 50%LLC

(per 1 arm)

SCSOA

Isc

3000

IGBT

Rth(j-cf)

Rth(cf-w)

0.039

0.058

0.041

0.047

K/W

FWD

Thermal Resistance

IGBT

FWD

PACKAGE CHARACTERISTICS

Item

Unit

Characteristics

Test Conditions

Between terminal

Terminal-Base

CTI

>16

600

Creepage Distance

Comparative Tracking Index

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.

* For actual application, please confirm this spec sheet is the newest revision.

12 3 4 5 6 7...10

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