生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X7 |
Reach Compliance Code: | compliant | 风险等级: | 5.21 |
最大集电极电流 (IC): | 600 A | 集电极-发射极最大电压: | 600 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PUFM-X7 |
元件数量: | 1 | 端子数量: | 7 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
最大功率耗散 (Abs): | 1700 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
VCEsat-Max: | 2.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MBM75A6 | HITACHI |
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IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES | |
MBM75F12 | HITACHI |
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IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES | |
MBM75GS12AW | HITACHI |
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Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES | |
MBM75GS12AW | RENESAS |
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IGBT | |
MBMK2520H1R0M | TAIYO YUDEN |
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Metal Wire-wound Chip Power Inductors (MCOIL, MB series H (High Spec.) type) | |
MBMK2520H1R5M | TAIYO YUDEN |
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Metal Wire-wound Chip Power Inductors (MCOIL, MB series H (High Spec.) type) | |
MBMK2520H2R2M | TAIYO YUDEN |
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Metal Wire-wound Chip Power Inductors (MCOIL, MB series H (High Spec.) type) | |
MBMK2520H3R3M | TAIYO YUDEN |
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Metal Wire-wound Chip Power Inductors (MCOIL, MB series H (High Spec.) type) | |
MBMK2520H4R7M | TAIYO YUDEN |
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Metal Wire-wound Chip Power Inductors (MCOIL, MB series H (High Spec.) type) | |
MBMK2520HR24N | TAIYO YUDEN |
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Metal Wire-wound Chip Power Inductors (MCOIL, MB series H (High Spec.) type) |