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MBM600GS6CW PDF预览

MBM600GS6CW

更新时间: 2024-11-23 19:43:15
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网双极性晶体管
页数 文件大小 规格书
1页 54K
描述
IGBT

MBM600GS6CW 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code:compliant风险等级:5.21
最大集电极电流 (IC):600 A集电极-发射极最大电压:600 V
门极-发射极最大电压:20 VJESD-30 代码:R-PUFM-X7
元件数量:1端子数量:7
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大功率耗散 (Abs):1700 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
VCEsat-Max:2.5 VBase Number Matches:1

MBM600GS6CW 数据手册

  

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