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MBM75GS12AW PDF预览

MBM75GS12AW

更新时间: 2024-11-23 20:00:39
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网双极性晶体管
页数 文件大小 规格书
7页 379K
描述
IGBT

MBM75GS12AW 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.68
最大集电极电流 (IC):75 A集电极-发射极最大电压:1200 V
门极-发射极最大电压:20 V元件数量:1
最高工作温度:150 °C最大功率耗散 (Abs):450 W
子类别:Insulated Gate BIP TransistorsVCEsat-Max:3.4 V
Base Number Matches:1

MBM75GS12AW 数据手册

 浏览型号MBM75GS12AW的Datasheet PDF文件第2页浏览型号MBM75GS12AW的Datasheet PDF文件第3页浏览型号MBM75GS12AW的Datasheet PDF文件第4页浏览型号MBM75GS12AW的Datasheet PDF文件第5页浏览型号MBM75GS12AW的Datasheet PDF文件第6页浏览型号MBM75GS12AW的Datasheet PDF文件第7页 
Status List  
Date:Jul. 2005  
KS05013  
M:Mass production W:Working sample A:Abolition  
High-Voltage High-Power Series  
Absolute Maximum Ratings  
Characteristics  
CES  
V
C
I
C
P
Connection  
Type  
Outline  
Status  
CE(sat)  
V
on  
t
off  
t
f
t
(V)  
(A)  
900  
(W)  
( s)Max. ( s)Max. ( s)Max.  
µ µ µ  
(V)Typ.  
5.5  
4.2  
4.2  
4.8  
4.5  
4.5  
2.9  
4.4  
4.2  
2.7  
2.7  
2.7  
2.7  
2.7  
4.1  
4.2  
2.7  
M
M
M
M
M
M
M
M
M
M
M
M
M
W
M
W
M
MBN900D45A  
MBN800E33D  
MBN1200E33D  
MBN1200D33C  
MBN600C33A  
MBN400C33A  
MBN1200E25C  
MBN600D20  
4,500  
3,300  
3,300  
3,300  
3,300  
3,300  
2,500  
2,000  
2,000  
1,700  
1,700  
1,700  
1,700  
1,700  
3,300  
3,300  
1,700  
-
2.2  
2.4  
3.3  
3.8  
4.0  
3.2  
4.2  
2.5  
2.6  
0.9  
1.2  
1.2  
1.2  
1.6  
3.8  
2.4  
1.6  
3.6  
3.0  
5.1  
5.6  
6.0  
5.3  
6.4  
5.9  
5.9  
1.4  
1.9  
1.9  
1.5  
2.0  
5.6  
3.0  
1.7  
1.6  
1.9  
2.5  
3.2  
3.2  
2.8  
3.2  
2.7  
2.4  
0.6  
0.7  
0.7  
0.7  
1.1  
1.4  
1.9  
0.9  
N-1  
N -10  
N-9  
N - 1  
N - 2  
N - 3  
N - 9  
N - 3  
N - 4  
N -10  
N -10  
N -11  
N-9  
N-9  
N - 1  
N-9  
N -10  
800  
-
1,200  
1,200  
600  
11,500  
12,000  
5,800  
Single  
400  
4,000  
1,200  
600  
12,000  
4,000  
MBN400D20  
400  
3,000  
MBN1200E17D  
MBN1600E17D  
MBN1600EB17D  
MBN1800E17D  
MBN2400E17D  
MBL800D33C  
MBL800E33D  
MBL1200E17D  
1,200  
1,600  
1,600  
1,800  
2,400  
800  
-
-
-
-
-
8,000  
Chopper  
800  
-
-
1,200  
RRM  
F
F
fr  
V
I
-
-
V
-
-
-
-
t
Connection  
Outline  
Status  
Type  
(V)  
(A)  
(V)Typ.  
3.2  
( s)Max.  
µ
M
M
MDN1200D33  
MDM800E33D  
3,300  
1,200  
-
-
-
-
-
0.8  
0.6  
N - 3  
Diode  
3,300  
800  
-
2.0  
M -10  
1

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