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MBM30LV0032 PDF预览

MBM30LV0032

更新时间: 2024-11-18 22:51:31
品牌 Logo 应用领域
富士通 - FUJITSU /
页数 文件大小 规格书
42页 390K
描述
32M (4M X 8) BIT NAND-type

MBM30LV0032 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20884-2E  
FLASH MEMORY  
CMOS  
32M (4M × 8) BIT NAND-type  
MBM30LV0032  
DESCRIPTION  
The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages  
× 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store  
ECC code(Specifications indicated are on condition that ECC system would be combined.). Program and read  
data is transferred between the memory array and page register in 528 byte increments. A 528 byte page can be  
programmed in 200 µs and an 8K byte block can be erased in 2 ms under typical conditions. An internal controller  
automates all program and erase operations including the verification of data margins. Data within a page can  
be read with a 50 ns cycle time per byte. The I/O pins are utilized for both address and data input/output as well  
as command inputs. The MBM30LV0032 is an ideal solution for applications requiring mass non-volatile storage  
such as solid state file storage, digital recording, image file memory for still cameras, and other uses which require  
high density and non-volatile storage.  
PRODUCT LINE UP  
Part No.  
MBM30LV0032  
–40°C to +85°C  
+2.7 V to +3.6 V  
72 mW  
Operating Temperature  
VCC  
Read  
Erase / Program  
TTL Standby  
CMOS Standby  
72 mW  
Power Dissipation (Max.)  
3.6 mW  
0.18 mW  
PACKAGES  
44-pin plastic TSOP (II)  
Marking Side  
Marking Side  
(FPT-44P-M07)  
(Normal Bend)  
(FPT-44P-M08)  
(Reverse Bend)  

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