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MBM400E25E

更新时间： 2024-11-23 20:01:55
品牌 Logo 应用领域
日立 - HITACHI 局域网栅晶体管
页数 文件大小 规格书
8页 357K
描述
Insulated Gate Bipolar Transistor, 400A I(C), 2500V V(BR)CES, N-Channel, MODULE-9

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MBM400E25E 数据手册

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IGBT MODULE  
Spec.No.IGBT-SP-10007 R1 P1  
MBM400E25E  
Silicon N-channel IGBT  
FEATURES  
∗ High speed, low loss IGBT module.  
∗ Low driving power due to low input  
capacitance MOS gate.  
∗ Low noise due to ultra soft fast recovery diode.  
∗ High reliability, high durability module.  
∗ High thermal fatigue durability.  
(delta Tc=70K, N>30,000cycles)  
∗ Isolated heat sink (terminal to base).  
ABSOLUTE MAXIMUM RATINGS (Tc=25oC )  
Item  
Symbol  
Unit  
MBM400E25E  
Collector Emitter Voltage  
Gate Emitter Voltage  
VCES  
VGES  
IC  
ICp  
IF  
IFM  
Tj  
Tstg  
VISO  
-
V
V
2,500  
±20  
DC  
1ms  
DC  
400 (Tc=100 oC)  
800  
Collector Current  
Forward Current  
A
400  
800  
A
1ms  
Junction Temperature  
Storage Temperature  
Isolation Voltage  
oC  
oC  
-40 ~ +150  
-40 ~ +125  
4,000(AC 1 minute)  
VRMS  
Terminals (M4/M8)  
Mounting (M6)  
2/15  
6
(1)  
(2)  
Screw Torque  
N·m  
-
Notes: (1) Recommended Value 1.8±0.2/9±1N·m  
(2) Recommended Value 5.5±0.5N·m  
ELECTRICAL CHARACTERISTICS  
Item  
Symbol Unit Min. Typ. Max.  
Test Conditions  
-
-
-
7
-
4
VCE=2,500V, VGE=0V, Tj=25oC  
Collector Emitter Cut-Off Current  
I CES  
mA  
20 VCE=2,500V, VGE=0V, Tj=138oC  
Gate Emitter Leakage Current  
IGES  
nA  
-500  
+500 VGE=±20V, VCE=0V, Tj=25oC  
Collector Emitter Saturation Voltage  
Gate Emitter Threshold Voltage  
Input Capacitance  
Internal Gate Resistance  
Rise Time  
VCE(sat)  
VGE(TO)  
Cies  
Rge  
tr  
V
V
nF  
Ω
1.6  
4.5  
-
2.3  
6.0  
67  
4.8  
1.5  
2.6  
1.4  
3.8  
2.2  
3.0 IC=400A, VGE=15V, Tj=138oC (chip level)  
7.5 VCE=15V, IC=40mA, Tj=25oC  
-
-
VCE=10V, VGE=0V, f=100kHz, Tj=25oC  
-
VCE=10V, VGE=0V, f=100kHz, Tj=25oC  
0.9  
2.0  
0.8  
2.8  
1.8  
2.1  
3.2  
2.0  
4.8  
VCC=1,300V, Ic=150A  
L=120nH  
Turn On Time  
Fall Time  
Turn Off Time  
ton  
tf  
Switching Times  
µs  
RG(ON/OFF)=15/4.7Ω (3)  
V
GE=±14.7V, Tj=138oC  
toff  
VFM  
Peak Forward Voltage Drop  
V
2.8 IF=400A, VGE=0V, Tj=138oC (chip level)  
Vcc=1,300V, IF=150A, L=120nH  
Reverse Recovery Time  
trr  
µs  
0.3  
0.6  
0.9  
Tj=138oC  
Turn On Loss  
Turn Off Loss  
Reverse Recovery Loss  
IGBT  
Thermal Impedance  
FWD  
Eon(10%)  
Eoff(10%)  
Err(10%)  
Rth(j-c)  
Rth(j-c)  
J/P  
J/P  
J/P  
-
-
-
-
-
0.25  
0.23  
0.15  
-
0.28  
0.30  
0.19  
0.0255  
0.051  
V
CC=1,300V, Ic= IF=150A, L=110nH  
RG(ON/OFF)= 15/4.7Ω (3)  
GE=±14.7V, Tj=138oC  
V
K/W  
Junction to case (par arm)  
-
Case to fin (λgrease=1W/(m･K),  
heat-sink flatness ≤50um)  
Contact Thermal Impedance  
Rth(c-f)  
K/W  
-
0.018  
-
Notes:(3) RG value is the test condition’s value for evaluation of the switching times, not recommended value.  
Please, determine the suitable RG value after the measurement of switching waveforms  
(overshoot voltage, etc.) with appliance mounted.  
* Please contact our representatives at order.  
* For improvement, specifications are subject to change without notice.  
* For actual application, please confirm this spec sheet is the newest revision.  
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