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IXYX120N120C3 PDF预览

IXYX120N120C3

更新时间: 2024-11-20 20:35:51
品牌 Logo 应用领域
IXYS 局域网功率控制晶体管
页数 文件大小 规格书
6页 214K
描述
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,

IXYX120N120C3 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:8.41外壳连接:COLLECTOR
最大集电极电流 (IC):240 A集电极-发射极最大电压:1200 V
配置:SINGLE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1500 W
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):346 ns标称接通时间 (ton):105 ns
Base Number Matches:1

IXYX120N120C3 数据手册

 浏览型号IXYX120N120C3的Datasheet PDF文件第2页浏览型号IXYX120N120C3的Datasheet PDF文件第3页浏览型号IXYX120N120C3的Datasheet PDF文件第4页浏览型号IXYX120N120C3的Datasheet PDF文件第5页浏览型号IXYX120N120C3的Datasheet PDF文件第6页 
1200V XPTTM IGBTs  
GenX3TM  
VCES = 1200V  
IC110 = 120A  
VCE(sat)  3.20V  
tfi(typ) = 96ns  
IXYK120N120C3  
IXYX120N120C3  
High-Speed IGBTs  
for 20-50 kHz Switching  
TO-264 (IXYK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
Tab  
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXYX)  
IC25  
TC= 25°C (Chip Capability)  
240  
A
ILRMS  
IC110  
ICM  
Terminal Current Limit  
TC= 110°C  
160  
120  
A
A
G
TC = 25°C, 1ms  
700  
A
C
Tab  
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
60  
2
A
J
G = Gate  
E
= Emitter  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1  
ICM = 240  
A
C = Collector  
Tab = Collector  
(RBSOA)  
Clamped Inductive Load  
VCE VCES  
PC  
TC = 25°C  
1500  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Optimized for Low Switching Losses  
Square RBSOA  
International Standard Packages  
Positive Thermal Coefficient of  
Vce(sat)  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Avalanche Rated  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
High Current Handling Capability  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 500A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
5.0  
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
25 A  
TJ = 150C  
TJ = 150C  
1.5 mA  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.55  
3.40  
3.20  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100451B(9/13)  

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