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IXZ4DF12N100 PDF预览

IXZ4DF12N100

更新时间: 2024-11-05 05:39:55
品牌 Logo 应用领域
IXYS 驱动
页数 文件大小 规格书
7页 250K
描述
RF Power MOSFET & DRIVER

IXZ4DF12N100 数据手册

 浏览型号IXZ4DF12N100的Datasheet PDF文件第2页浏览型号IXZ4DF12N100的Datasheet PDF文件第3页浏览型号IXZ4DF12N100的Datasheet PDF文件第4页浏览型号IXZ4DF12N100的Datasheet PDF文件第5页浏览型号IXZ4DF12N100的Datasheet PDF文件第6页浏览型号IXZ4DF12N100的Datasheet PDF文件第7页 
IXZ4DF12N100  
RFꢀPowerꢀMOSFETꢀ&ꢀDRIVERꢀ  
1000ꢀVoltsꢀ  
12ꢀAꢀ  
0.7ꢀOhmsꢀ  
Driverꢀ/ꢀMOSFETꢀCombinationꢀꢀ  
DEICꢁ515ꢀDriverꢀcombinedꢀwithꢀaꢀDE375ꢁ102N12AꢀMOSFETꢀ  
GateꢀdriverꢀmatchedꢀtoꢀMOSFETꢀꢀ  
Featuresꢀ  
•ꢀ IsolatedꢀSubstrateꢀ  
−ꢀ highꢀisolationꢀvoltageꢀ(>2500V)ꢀ  
−ꢀ excellentꢀthermalꢀtransferꢀ  
−ꢀ Increasedꢀtemperatureꢀandꢀpowerꢀcyclingꢀcapabilityꢀꢀꢀ  
•ꢀ IXYSꢀadvancedꢀZꢁMOSꢀprocessꢀ  
•ꢀ LowꢀRDS(on)ꢀ  
•ꢀ Veryꢀlowꢀinsertionꢀinductanceꢀ(<2nH)ꢀ  
•ꢀ Noꢀberylliumꢀoxideꢀ(BeO)ꢀorꢀotherꢀhazardousꢀmaterialsꢀꢀ  
•ꢀ BuiltꢀusingꢀtheꢀadvantagesꢀandꢀcompatibilityꢀofꢀCMOSꢀandꢀIXYSꢀ  
HDMOS™ꢀprocessesꢀ  
•ꢀ LatchꢁUpꢀProtectedꢀ  
•ꢀ LowꢀQuiescentꢀSupplyꢀCurrentꢀ  
Applicationsꢀ  
Advantagesꢀ  
•ꢀ ClassꢀDꢀorꢀEꢀSwitchingꢀ  
Amplifierꢀ  
•ꢀ MultiꢀMHzꢀSwitchꢀModeꢀ  
PowerꢀSuppliesꢀ(SMPS)ꢀ  
•ꢀ OptimizedꢀforꢀRFꢀandꢀhighꢀspeedꢀ  
•ꢀ Easyꢀtoꢀmount—noꢀinsulatorsꢀneededꢀ  
•ꢀ Highꢀpowerꢀdensityꢀ  
•ꢀ Singleꢀpackageꢀreducesꢀsizeꢀandꢀheatꢀsinkꢀareaꢀ  
Description  
TheꢀIXZ4DF12N100ꢀisꢀaꢀCMOSꢀhighꢀspeedꢀhighꢀcurrentꢀgateꢀdriverꢀandꢀaꢀMOSFETꢀcombinationꢀspecificallyꢀ  
designedꢀClassꢀD,ꢀE,ꢀHF,ꢀRFꢀapplicationsꢀatꢀupꢀtoꢀ40MHz,ꢀasꢀwellꢀasꢀotherꢀapplications.ꢀTheꢀIXZ4DF12N100ꢀinꢀ  
pulseꢀmodeꢀcanꢀprovideꢀ72Aꢀofꢀpeakꢀcurrentꢀwhileꢀproducingꢀvoltageꢀriseꢀandꢀfallꢀtimesꢀofꢀlessꢀthanꢀ5ns,ꢀandꢀ  
minimumꢀpulseꢀwidthsꢀofꢀ8ns.ꢀTheꢀinputꢀofꢀtheꢀdriverꢀꢀisꢀfullyꢀimmuneꢀtoꢀlatchꢀupꢀoverꢀtheꢀentireꢀoperatingꢀ  
range.ꢀDesignedꢀwithꢀsmallꢀinternalꢀdelays,ꢀtheꢀIXZ4DF12N100ꢀisꢀsuitableꢀforꢀhigherꢀpowerꢀoperationꢀwhereꢀ  
combinersꢀareꢀused.ꢀItsꢀfeaturesꢀandꢀwideꢀsafetyꢀmarginꢀinꢀoperatingꢀvoltageꢀandꢀpowerꢀmakeꢀtheꢀ  
IXZ4DF12N100ꢀunmatchedꢀinꢀperformanceꢀandꢀvalue.  
TheꢀIXZ4DF12N100ꢀisꢀpackagedꢀinꢀDEIsꢀlowꢀinductanceꢀRFꢀpackageꢀincorporatingꢀDEI'sꢀRFꢀlayoutꢀtechniquesꢀ  
toꢀminimizeꢀstrayꢀleadꢀinductancesꢀforꢀoptimumꢀswitchingꢀperformance.ꢀTheꢀIXZ4DF12N100ꢀisꢀaꢀsurfaceꢁ  
mountableꢀdevice.ꢀ  
Figureꢀ1.ꢀ  
FunctionalꢀDiagramꢀ  

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