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IXYX50N170C PDF预览

IXYX50N170C

更新时间: 2024-11-06 14:56:39
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管高压
页数 文件大小 规格书
7页 261K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、低能量损耗和快速切换等特点。 凭借通态电压的正温度系数,这些高压IGBT可用于并联,相比串联低电压器件更加

IXYX50N170C 数据手册

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Advance Technical Information  
VCES = 1700V  
IC110 = 50A  
VCE(sat)  3.7V  
tfi(typ) = 95ns  
High Voltage  
XPTTM IGBT  
IXYX50N170C  
PLUS247 (IXYX)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
1700  
1700  
V
V
TJ = 25°C to 175°C, RGE = 1M  
G
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
Tab  
E
IC25  
IC110  
TC = 25°C  
TC = 110°C  
178  
50  
A
A
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
ICM  
TC = 25°C, 1ms  
460  
A
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1  
Clamped Inductive Load  
ICM = 200  
A
V
(RBSOA)  
VCE 1360  
PC  
TC = 25°C  
1500  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
High Voltage Package  
High Blocking Voltage  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
High Peak Current Capability  
Low Saturation Voltage  
FC  
Mounting Force  
20..120 /4.5..27  
6
N/lb  
g
Weight  
Advantages  
Low Gate Drive Requirement  
High Power Density  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1700  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
25 A  
3.5 mA  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
2.8  
3.9  
3.7  
V
V
© 2017 IXYS CORPORATION, All Rights Reserved  
DS100800(02/17)  

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