Datasheet > IXZ210N50L2

IXZ210N50L2

更新时间： 2024-10-02 20:04:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
7页	861K
描述
RF MOSFET N-CHANNEL DE275

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXZ210N50L2 技术参数

是否无铅：	不含铅	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	2.11	Base Number Matches：	1

IXZ210N50L2 数据手册

IXZ210N50L2

RF Power MOSFET

N-channel enhancement mode linear RF power MOSFET

Ideal for class AB and C industrial, scienꢀꢁc, medical, and commercial applicaꢀons.

V_DSS= 500 V

I_D25= 10 A

Advantages

Features

 High Performance RF Package

 Easy to mount—no insulators needed

 Isolated Substrate



high isolation voltage (>2500V)

excellent thermal transfer

DRAIN

Increased temperature and power cycling

capability

GATE

 IXYS RF Low Capacitance Z-MOS^TMProcess

 Very low insertion inductance (<2nH)

 No beryllium oxide (BeO) or other

hazardous materials

SG1

SG2

SD1

SD2

Maximum Raꢀngs

Symbol Parameter

Test Conditions

Maximum Units

Drain-source voltage

T_J= 25°C to 150°C

V_DSS

500

Drain-gate voltage

T_J= 25°C to 150°C; R_GS= 1 M

Continuous

V_DGR

500

V_GS

±20

Gate-source voltage

Transient

V_GSM

±30

Continuous drain current

T_c= 25°C

I_D25

390

Package power dissipation

P_DC

P_DHS

Dissipation to heat-sink

T_c= 25°C, Derate 6.0W/°C above 25°C

T_AMB= 25°C

220

P_DAMB

R_thJC

R_thJHS

Ambient power dissipation

Thermal resistance junction to case

0.32

0.57

-55 - 150

° C/W

° C

Thermal resistance junction to heat-sink

T_J, T_STG

Operating and storage junction temperature range

Lead temperature

1.6mm(0.063 in) from case for 10 s

T_L

300

Electrical Characterisꢀcs

Symbol Parameter

Test Conditions

Min

Typ

Max

Units

Static

V_GS= 0 V, I_D= 4 ma

500

Breakdown voltage drain to source

BV_DSS

I_DSS

I_GSS

g_fs

V_DS= 0.8V_DSS

V_GS= 0

T_J= 25C

T_J=125C

A

Drain leakage current

V_GS= ±20 V_DC, V_DS= 0

±100

Gate leakage current

Transconductance

Threshold voltage

V_DS= 60 V, I_D= 0.5I_D25, pulse test

3.1

5.4

V_DS= V_GS, I_D= 250

4.0

6.5

V_GS(th)

12 3 4 5 6 7

中文翻译

下载PDF

与IXZ210N50L2相关器件

型号	品牌	获取价格	描述	数据表
IXZ2210N50L	IXYS	获取价格	N-Channel Enhancement Mode Linear 175MHz RF MOSFET
IXZ2210N50L2	IXYS	获取价格	RF MOSFET 2N-CHANNEL DE275
IXZ-2510	TDK	获取价格	陀螺仪
IXZ308N120	IXYS	获取价格	Z-MOS RF Power MOSFET
IXZ316N60	IXYS	获取价格	Z-MOS RF Power MOSFET
IXZ318N50	IXYS	获取价格	Z-MOS RF Power MOSFET
IXZ4DF12N100	IXYS	获取价格	RF Power MOSFET & DRIVER
IXZ4DF18N50	IXYS	获取价格	RF Power MOSFET & DRIVER
IXZH10N50LA	IXYS	获取价格	RF Power MOSFET
IXZH10N50LB	IXYS	获取价格	RF Power MOSFET