IXZ318N50
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
NꢁChannelꢀEnhancementꢀModeꢀSwitchꢀModeꢀRFꢀMOSFETꢀ
LowꢀCapacitanceꢀZꢁMOSTMꢀMOSFETꢀProcessꢀ
OptimizedꢀforꢀRFꢀOperationꢀ
VDSS
ꢀ
=ꢁ 500ꢁVꢁ
IdealꢀforꢀClassꢀC,ꢀD,ꢀ&ꢀEꢀApplicationsꢀ
ID25ꢀ
=ꢁ
19ꢁAꢁ
RDS(on)ꢀ ≤ꢁ
0.34ꢁꢀꢁ
Symbolꢁ
VDSS
VDGR
VGS
VGSM
ID25
IDM
ARꢀ
TestꢁConditionsꢁ
TJꢀ=ꢀ25°Cꢀtoꢀ150°Cꢀꢀ
TJꢀ=ꢀ25°Cꢀtoꢀ150°C;ꢀRGSꢀ=ꢀ1ꢀMꢀꢀꢀ
Continuousꢀ
MaximumꢁRatingsꢁꢁ
ꢀ
500ꢀꢀ
500ꢀꢀ
Vꢀ
V
PDCꢀ
=ꢁ 880ꢁWꢁ
ꢀ
ꢀ
±20ꢀꢀ
±30ꢀꢀ
19ꢀꢀ
Vꢀ
Vꢀ
Aꢀ
Aꢀ
Aꢀ
Transientꢀ
ꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
ꢀ
Tcꢀ=ꢀ25°C,ꢀpulseꢀwidthꢀlimitedꢀbyꢀTJMꢀꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
ꢀ
95ꢀꢀ
I
19ꢀꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
EAR
ꢁ
ꢀ
TBDꢀꢀ mJꢀ
5ꢀꢀꢀ V/nsꢀ
ISꢀ≤ꢁIDM,ꢀdi/dtꢀ≤ꢁ100A/ꢂs,ꢀVDDꢀ≤ꢀVDSS,ꢀꢀ
Tjꢀ≤ꢀ150°C,ꢀRGꢀ=ꢀ0.2ꢀꢀꢀ
dv/dtꢁꢁ
ISꢀ=ꢀ0ꢀ
>200ꢀꢀ V/nsꢀ
ꢀ
P
DCꢀ
PDHS
DAMBꢀ
RthJC
RthJHS
880ꢀꢀ
440ꢀꢀ
3.0ꢀ
Wꢀ
Wꢀ
Wꢀ
DRAIN
Tcꢀ=ꢀ25°Cꢀ
GATE
ꢀ
Tambꢀ=ꢀ25°Cꢀ
P
ꢀ
ꢀ
ꢀ
0.17ꢀ C/Wꢀ
0.34ꢀꢀ C/Wꢀ
SG1
SG2
SD1
SD2
ꢀ
Featuresꢁ
Symbolꢁ
TestꢁConditions
CharacteristicꢁValuesꢀ
•ꢁ IsolatedꢀSubstrateꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
−ꢁ highꢀisolationꢀvoltageꢀ(>2500V)ꢀ
−ꢁ excellentꢀthermalꢀtransferꢀ
ꢀ
ꢀ
min.ꢁ
500ꢀꢀ
typ.ꢁ
max.ꢁ ꢀ
−ꢁ Increasedꢀtemperatureꢀandꢀpowerꢀ
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ4ꢀmaꢀ
VDSS
VGS(th)
GSSꢀ
IDSS
ꢀ
ꢀ
ꢀ
Vꢀ
Vꢀ
cyclingꢀcapabilityꢀꢀꢀ
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢂΑꢀ
ꢀ
3.5ꢀ
4.9ꢀꢀ
6.5ꢀ
•ꢁ IXYSꢀadvancedꢀZꢁMOSꢀprocessꢀ
•ꢁ Lowꢀgateꢀchargeꢀandꢀcapacitancesꢀ
−ꢁ easierꢀtoꢀdriveꢀ
VGSꢀ=ꢀ±20ꢀVDC,ꢀVDSꢀ=ꢀ0ꢀ
I
ꢀ
ꢀ
ꢀ
ꢀ
±100ꢀꢀ
nAꢀ
VDSꢀ=ꢀ0.8VDSSꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀTJꢀ=ꢀ25Cꢀ
VGS=0ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀTJꢀ=125Cꢀ
ꢀ
50ꢀ
1ꢀ
ꢂAꢀ
mAꢀ
−ꢁ fasterꢀswitchingꢀ
•ꢁ LowꢀRDS(on)
ꢀ
•ꢁ Veryꢀlowꢀinsertionꢀinductanceꢀ(<2nH)ꢀ
VGSꢀ=ꢀ20ꢀV,ꢀIDꢀ=ꢀ0.5ID25
Pulseꢀtest,ꢀtꢀ≤ꢀ300ꢂS,ꢀdutyꢀcycleꢀdꢀ≤ꢀ2%ꢀꢀ
ꢀ
RDS(on)
ꢀ
.32ꢀ
.34ꢀ
ꢀꢀ
•ꢁ Noꢀberylliumꢀoxideꢀ(BeO)ꢀorꢀotherꢀ
hazardousꢀmaterialsꢀꢀ
VDSꢀ=ꢀ50ꢀV,ꢀIDꢀ=ꢀ0.5ID25,ꢀpulseꢀtestꢀ
ꢀ
gfsꢀ
TJꢀ
5.0ꢀ
5.4ꢀ
ꢀ
6.0ꢀ
Sꢀ
Advantagesꢁ
ꢀ
ꢁ55ꢀ
+175ꢀꢀ
°Cꢀꢀꢀ
°Cꢀꢀꢀꢀ
°Cꢀꢀꢀꢀꢀ
°Cꢀꢀꢀꢀꢀꢀ
gꢀ
•ꢁ OptimizedꢀforꢀRFꢀandꢀhighꢀspeedꢀ
•ꢁ Easyꢀtoꢀmount—noꢀinsulatorsꢀneededꢀ
•ꢁ Highꢀpowerꢀdensityꢀ
ꢀ
TJMꢀ
ꢀ
ꢀ
175ꢀꢀ
ꢀ
ꢀ
ꢀ
Tstg
ꢀ
ꢁ55ꢀ
+ꢀ175ꢀ
1.6mm(0.063ꢀin)ꢀfromꢀcaseꢀforꢀ10ꢀsꢀ
ꢀ
TLꢀ
ꢀ
ꢀ
300ꢀꢀ
3.5ꢀꢀ
ꢀ
ꢀ
Weightꢀ