Datasheet > IXZ2210N50L2

IXZ2210N50L2

更新时间： 2024-11-05 21:22:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
7页	1020K
描述
RF MOSFET 2N-CHANNEL DE275

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中文翻译

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技术参数
数据手册

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IXZ2210N50L2 技术参数

是否无铅：	不含铅	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
Base Number Matches：	1

IXZ2210N50L2 数据手册

IXZ2210N50L2

RF Power MOSFET

N-channel enhancement mode linear RF power MOSFET

Ideal for class AB and C industrial, scienꢀꢁc, medical, and commercial applicaꢀons.

V_DSS= 500 V

I_D25= 10 A

Advantages

Features

 High Performance RF Package

 Easy to mount—no insulators needed

 Isolated Substrate



high isolation voltage (>2500V)

excellent thermal transfer

DRAIN 2

DRAIN 1

Increased temperature and power cycling

capability

 IXYS RF Low Capacitance Z-MOS^TMProcess

 Very low insertion inductance (<2nH)

GATE 1

GATE 2

 No beryllium oxide (BeO) or other

hazardous materials

SG1

SD1

SD2

SG2

Maximum Raꢀngs

Symbol Parameter

Test Conditions

Maximum Units

Drain-source voltage

T_J= 25°C to 150°C

V_DSS

500

Drain-gate voltage

T_J= 25°C to 150°C; R_GS= 1 M

Continuous

V_DGR

500

V_GS

±20

Gate-source voltage

Transient

V_GSM

±30

Continuous drain current

T_c= 25°C

I_D25

270

Package power dissipation per MOSFET

P_DC

P_DHS

Dissipation to heat-sink per MOSFET

T_c= 25°C, Derate 2 W/°C above 25°C

T_AMB= 25°C

200

P_DAMB

R_thJC

R_thJHS

Ambient power dissipation

Thermal resistance junction to case

0.47

° C/W

° C

Thermal resistance junction to heat-sink

0.65

T_J, T_STG

-55 to 150

Operating and storage junction temperature range

Lead temperature

1.6mm(0.063 in) from case for 10 s

T_L

300

Electrical Characterisꢀcs

Symbol Parameter

Test Conditions

Min

Typ

Max

Units

Static

V_GS= 0 V, I_D= 4 ma

500

Breakdown voltage drain to source

BV_DSS

I_DSS

I_GSS

g_fs

V_DS= 0.8V_DSS

V_GS= 0

T_J= 25C

T_J=125C

A

Drain leakage current

V_GS= ±20 V_DC, V_DS= 0

±100

Gate leakage current

Transconductance

Threshold voltage

V_DS= 60 V, I_D= 0.5I_D25, pulse test

3.1

5.4

V_DS= V_GS, I_D= 250

4.0

6.5

V_GS(th)

12 3 4 5 6 7

中文翻译

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