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IXZ2210N50L PDF预览

IXZ2210N50L

更新时间: 2024-11-17 22:47:59
品牌 Logo 应用领域
IXYS 射频
页数 文件大小 规格书
9页 248K
描述
N-Channel Enhancement Mode Linear 175MHz RF MOSFET

IXZ2210N50L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-F8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75外壳连接:ISOLATED
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:500 V
最大漏极电流 (ID):10 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-F8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

IXZ2210N50L 数据手册

 浏览型号IXZ2210N50L的Datasheet PDF文件第2页浏览型号IXZ2210N50L的Datasheet PDF文件第3页浏览型号IXZ2210N50L的Datasheet PDF文件第4页浏览型号IXZ2210N50L的Datasheet PDF文件第5页浏览型号IXZ2210N50L的Datasheet PDF文件第6页浏览型号IXZ2210N50L的Datasheet PDF文件第7页 
IXZ210N50L & IXZ2210N50L  
RF Power MOSFET  
N-Channel Enhancement Mode Linear 175MHz RF MOSFET  
Low Capacitance Z-MOSTM MOSFET Process  
Optimized for Linear Operation  
VDSS  
ID25  
=
=
500 V  
10 A  
Ideal for Class AB & C, Broadcast & Communications Applications  
150V (operating)  
300 & 550 Watts  
175MHz  
Note: All data is per the IXZ210N50L single ended device unless otherwise noted.  
Symbol  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
Continuous  
Maximum Ratings  
500  
500  
±20  
±30  
10  
V
V
V
V
A
A
VDSS  
VDGR  
VGS  
Transient  
VGSM  
ID25  
Tc = 25°C  
Tc = 25°C, pulse width limited by  
TJM  
60  
IDM  
Tc = 25°C  
Tc = 25°C  
16  
TBD  
5
A
mJ  
IAR  
EAR  
IS IDM, di/dt 100A/µs, VDD  
VDSS  
V/ns  
,
dv/dt  
Tj 150°C, RG = 0.2Ω  
IS = 0  
>200  
V/ns  
IXZ210N50L IXZ2210N50L  
470  
235  
940  
470  
W
W
PDC  
Tc = 25°C, Derate 6.0W/°C above  
25°C  
PDHS  
Tc = 25°C  
10  
10  
0.16  
0.29  
W
C/W  
C/W  
PDAMB  
RthJC  
0.32  
0.57  
RthJHS  
Features  
Isolated Substrate  
min.  
500  
3.5  
typ.  
max.  
VGS = 0 V, ID = 4 ma  
VDS = VGS, ID = 250µΑ  
VGS = ±20 VDC, VDS = 0  
V
V
high isolation voltage (>2500V)  
VDSS  
VGS(th)  
IGSS  
excellent thermal transfer  
4.95  
6.5  
Increased temperature and power  
cycling capability  
±100  
nA  
IXYS RF Low Capacitance Z-MOSTM  
VDS = 0.8VDSS  
VGS=0  
TJ = 25C  
TJ =125C  
50  
1
IDSS  
µA  
mA  
Process  
Very low insertion inductance (<2nH)  
No beryllium oxide (BeO) or other  
VGS = 20 V, ID = 0.5ID25  
Pulse test, t 300µS, duty cycle d 2%  
1.0  
3.8  
RDS(on)  
hazardous materials  
Advantages  
VDS = 50 V, ID = 0.5ID25, pulse test  
S
°C  
°C  
°C  
°C  
g
gfs  
High Performance RF Package  
Easy to mount—no insulators needed  
-55  
-55  
+175  
+175  
+ 175  
TJ  
TJM  
Tstg  
TL  
(1) Thermal specifications are for the pack-  
age, not per transistor  
1.6mm(0.063 in) from case for 10 s  
300  
4
Weight  

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