IXZ308N120

更新时间： 2024-11-05 11:08:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
3页	149K
描述
Z-MOS RF Power MOSFET

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中文翻译

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数据手册

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IXZ308N120 数据手册

IXZ308N120

Z-MOS RF Power MOSFET

N-Channel Enhancement Mode LSiwneitcahr 1M7o5dMeHRzFRMFOMSOFSEFTET

LowCCapaapcaictaitnacneceZ-ZM-MOOS_TS_MTMMMOOSFSEFTETPrPorcoecsesss

Optimized for LRiFneOapr eOrapteiorantion

Ideal for Class ACB, D&, C&,EBAropapdliccaastito&nsCommunications Applications

V_DSS

I_D25

= 1200 V

8.0 A

2.1 Ω

R_DS(on)

P_DC

Symbol

Test Conditions

Maximum Rat-

ings

880 W

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

Continuous

1200

V_DSS

V_DGR

±20

±30

V_GS

V_GSM

I_D25

I_DM

Transient

T_c= 25°C

T_c= 25°C, pulse width limited by T_JM

T_c= 25°C

I_AR

T_c= 25°C

TBD

E_AR

I_S≤ I_DM, di/dt ≤ 100A/µs, V_DD≤ V_DSS

T_j≤ 150°C, R_G= 0.2Ω

5 V/ns

dv/dt

I_S= 0

>200 V/ns

DRAIN

880

440

3.0

P_DC

GATE

T_c= 25°C, Derate 4.4W/°C above 25°C

T_c= 25°C

P_DHS

P_DAMB

R_thJC

R_thJHS

0.17 C/W

0.34 C/W

SG1 SG2

SD1

SD2

Features

• Isolated Substrate

−

high isolation voltage (>2500V)

min.

1200

3.5

typ.

max.

excellent thermal transfer

Increased temperature and power

cycling capability

V_GS= 0 V, I_D= 4 ma

V_DS= V_GS, I_D= 250µΑ

V_GS= ±20 V_DC, V_DS= 0

V_DSS

V_GS(th)

I_GSS

• IXYS advanced Z-MOS process

• Low gate charge and capacitances

−

•

6.5

±100

easier to drive

faster switching

Low R_DS(on)

V_DS= 0.8V_DSS

V_GS=0

T_J= 25C

T_J=125C

I_DSS

µA

• Very low insertion inductance (<2nH)

V_GS= 20 V, I_D= 0.5I_D25

Pulse test, t ≤ 300µS, duty cycle d ≤ 2%

2.1

R_DS(on)

Ω

• No beryllium oxide (BeO) or other

hazardous materials

V_DS= 50 V, I_D= 0.5I_D25, pulse test

10.1

°C

g_fs

Advantages

-55

+175

T_J

• Optimized for RF and high speed

• Easy to mount—no insulators needed

• High power density

175

T_JM

T_stg

T_L

+ 175

1.6mm(0.063 in) from case for 10 s

300

3.5

Weight

12 3

中文翻译

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