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IXZ12210N50L PDF预览

IXZ12210N50L

更新时间: 2024-11-20 03:13:15
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IXYS /
页数 文件大小 规格书
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描述
RF Power MOSFET

IXZ12210N50L 数据手册

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IXZ12210N50L  
RF Power MOSFET  
N-Channel Enhancement Mode Linear 175MHz RF MOSFET  
Low Capacitance Z-MOSTM MOSFET Process  
Optimized for Linear Operation  
VDSS  
ID25  
=
=
500 V  
10 A  
Ideal for Class AB & C, Broadcast & Communications Applications  
125V (operating)  
175MHz  
Note: All data is per the IXZ1210N50L single ended device unless otherwise  
Symbol  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
Continuous  
Maximum Ratings  
500  
500  
±20  
±30  
10  
V
V
V
V
A
A
VDSS  
VDGR  
VGS  
Transient  
VGSM  
ID25  
Tc = 25°C  
Tc = 25°C, pulse width limited by  
TJM  
60  
IDM  
Tc = 25°C  
Tc = 25°C  
16  
TBD  
5
A
mJ  
IAR  
EAR  
IS IDM, di/dt 100A/µs, VDD  
VDSS  
V/ns  
,
dv/dt  
Tj 150°C, RG = 0.2Ω  
IS = 0  
>200  
V/ns  
Per Device  
Total  
180  
150  
360  
W
W
PDC  
Tc = 25°C, Derate 6.0W/°C above  
25°C  
300  
PDHS  
Tc = 25°C  
10  
W
C/W  
C/W  
PDAMB  
RthJC  
0.83  
1.00  
0.42  
0.50  
RthJHS  
Features  
min.  
500  
3.5  
typ.  
max.  
IXYS RF Low Capacitance Z-MOSTM  
Process  
VGS = 0 V, ID = 4 ma  
VDS = VGS, ID = 250µΑ  
VGS = ±20 VDC, VDS = 0  
V
V
VDSS  
VGS(th)  
IGSS  
Very low insertion inductance (<2nH)  
4.83  
6.5  
Advantages  
±100  
nA  
High Performance RF Package  
Easy to mount—no insulators needed  
Standard RF Package  
VDS = 0.8VDSS  
VGS=0  
TJ = 25C  
TJ =125C  
50  
1
IDSS  
µA  
mA  
VGS = 20 V, ID = 0.5ID25  
Pulse test, t 300µS, duty cycle d 2%  
1.0  
3.8  
RDS(on)  
(1) Thermal specifications are for the pack-  
age, not per transistor  
VDS = 50 V, ID = 0.5ID25, pulse test  
S
°C  
°C  
°C  
°C  
g
gfs  
-55  
-55  
+175  
+175  
+ 175  
TJ  
TJM  
Tstg  
TL  
1.6mm(0.063 in) from case for 10 s  
300  
4
Weight  

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