Datasheet > IXZ12210N50L

IXZ12210N50L

更新时间： 2024-10-02 03:13:15

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	304K
描述
RF Power MOSFET

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中文翻译

获取价格

数据手册

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IXZ12210N50L 数据手册

IXZ12210N50L

RF Power MOSFET

N-Channel Enhancement Mode Linear 175MHz RF MOSFET

Low Capacitance Z-MOS_TMMOSFET Process

Optimized for Linear Operation

V_DSS

I_D25

500 V

10 A

Ideal for Class AB & C, Broadcast & Communications Applications

125V (operating)

175MHz

Note: All data is per the IXZ1210N50L single ended device unless otherwise

Symbol

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

Continuous

Maximum Ratings

500

±20

±30

V_DSS

V_DGR

V_GS

Transient

V_GSM

I_D25

T_c= 25°C

T_c= 25°C, pulse width limited by

T_JM

I_DM

T_c= 25°C

TBD

I_AR

E_AR

I_S≤ I_DM, di/dt ≤ 100A/µs, V_DD

V_DSS

≤

V/ns

dv/dt

T_j≤ 150°C, R_G= 0.2Ω

I_S= 0

>200

V/ns

Per Device

Total

180

150

360

P_DC

T_c= 25°C, Derate 6.0W/°C above

25°C

300

P_DHS

T_c= 25°C

C/W

P_DAMB

R_thJC

0.83

1.00

0.42

0.50

R_thJHS

Features

min.

500

3.5

typ.

max.

• IXYS RF Low Capacitance Z-MOS^TM

Process

V_GS= 0 V, I_D= 4 ma

V_DS= V_GS, I_D= 250µΑ

V_GS= ±20 V_DC, V_DS= 0

V_DSS

V_GS(th)

I_GSS

• Very low insertion inductance (<2nH)

4.83

6.5

Advantages

±100

• High Performance RF Package

• Easy to mount—no insulators needed

• Standard RF Package

V_DS= 0.8V_DSS

V_GS=0

T_J= 25C

T_J=125C

I_DSS

µA

V_GS= 20 V, I_D= 0.5I_D25

Pulse test, t ≤ 300µS, duty cycle d ≤ 2%

1.0

3.8

R_DS(on)

Ω

(1) Thermal specifications are for the pack-

age, not per transistor

V_DS= 50 V, I_D= 0.5I_D25, pulse test

°C

g_fs

-55

+175

+ 175

T_J

T_JM

T_stg

T_L

1.6mm(0.063 in) from case for 10 s

300

Weight

12 3 4

中文翻译

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