Datasheet > IXYY8N90C3

IXYY8N90C3

更新时间： 2024-11-06 01:19:51

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
6页	178K
描述
900V XPTTM IGBT

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中文翻译

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数据手册

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IXYY8N90C3 数据手册

900V XPT^TMIGBT

GenX3^TM

V_CES= 900V

I_C110= 8A

V_CE(sat) 3.0V

t_fi(typ)= 130ns

IXYY8N90C3

IXYP8N90C3

High-Speed IGBT

for 20-50 kHz Switching

TO-252 (IXYY)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 175°C

900

C (Tab)

T_J= 25°C to 175°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-220 (IXYP)

I_C25

I_C110

T_C= 25°C

T_C= 110°C

I_CM

T_C= 25°C, 1ms

C (Tab)

I_A

E_AS

T_C= 25°C

G = Gate

E = Emitter

= Collector

SSOA

V_GE= 15V, T_VJ= 150°C, R_G= 30

Clamped Inductive Load

I_CM= 16

Tab = Collector

(RBSOA)

@V_CE V_CES

P_C

T_C= 25°C

125

T_J

T_JM

T_stg

-55 ... +175

175

°C

Features



-55 ... +175

Optimized for Low Switching Losses

Square RBSOA

Positive Thermal Coefficient of

Vce(sat)



T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



Avalanche Rated

M_d

Mounting Torque (TO-220)

1.13/10

Nm/lb.in.

International Standard Packages

Weight

TO-252

TO-220

0.35

3.00

Advantages



High Power Density

Low Gate Drive Requirement



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

950

3.5

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



High Frequency Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

6.0



10 A

150 μA



T_J= 150C



I_GES

V_CE= 0V, V_GE= 20V

100 nA



V_CE(sat)

I_C= 8A, V_GE= 15V, Note 1

2.15

2.75

3.00



Lamp Ballasts

DS100399B(12/14)

12 3 4 5 6

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