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IXYX40N450HV PDF预览

IXYX40N450HV

更新时间: 2024-11-19 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管高压
页数 文件大小 规格书
5页 219K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、低能量损耗和快速切换等特点。 凭借通态电压的正温度系数,这些高压IGBT可用于并联,相比串联低电压器件更加

IXYX40N450HV 数据手册

 浏览型号IXYX40N450HV的Datasheet PDF文件第2页浏览型号IXYX40N450HV的Datasheet PDF文件第3页浏览型号IXYX40N450HV的Datasheet PDF文件第4页浏览型号IXYX40N450HV的Datasheet PDF文件第5页 
Preliminary Technical Information  
High Voltage XPTTM  
IGBT  
VCES = 4500V  
IC110 = 40A  
VCE(sat) 3.9V  
IXYX40N450HV  
TO-247PLUS-HV  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
4500  
4500  
V
V
G
E
VCGR  
TJ = 25°C to 150°C, RGE = 1M  
Tab  
C
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
95  
40  
A
A
A
G = Gate  
C = Collector  
E
= Emitter  
TC = 110°C  
TC = 25°C, 1ms  
Tab = Collector  
350  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 10  
Clamped Inductive Load  
ICM = 120  
3600  
A
V
Features  
PC  
TC = 25°C  
660  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
High Voltage Package  
High Blocking Voltage  
TJM  
Tstg  
-55 ... +150  
High Peak Current Capability  
Low Saturation Voltage  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
20..120/4.5..27  
6
N/lb  
g
Advantages  
Weight  
Low Gate Drive Requirement  
High Power Density  
Applications  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
Min.  
4500  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
25 μA  
1.25 mA  
±200 nA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
VCE(sat)  
IC = 40A, VGE = 15V, Note 1  
3.2  
4.0  
3.9  
V
V
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100616A(8/16)  

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