Datasheet > IXGR72N60B3D1

IXGR72N60B3D1

更新时间： 2024-11-05 19:54:15

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
8页	213K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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IXGR72N60B3D1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

IXGR72N60B3D1 数据手册

Preliminary Technical Information

GenX3^TMB3-Class

IGBT w/Diode

V_CES

I_C110

= 600V

= 40A

IXGR72N60B3D1

V_CE(sat)≤£ 1.80V

(Electrically Isolated Back Surface)

t_fi(typ)

= 90ns

Medium Speed Low Vsat PT IGBTs

for 5-40 kHz Switching

ISOPLUS 247^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

600

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

ISOLATED TAB

I_C25

I_C110

I_F110

I_CM

T_C= 25°C (Limited by Leads)

T_C= 110°C

G = Gate

E = Emitter

C = Collector

T_C= 25°C, 1ms

360

I_A

T_C= 25°C

Features

E_AS

220

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 3Ω

Clamped Inductive Load

I_CM= 240

(RBSOA)

V_CE≤ 600

^zIsolated Mounting Surface

^zAvalanche Rated

P_C

T_C= 25°C

200

^zAnti-Parallel Ultra Fast Diode

^z2500V Electrical Isolation

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Advantages

V_ISOL

50/60 Hz, RMS, t = 1Minute

2500

3000

^zHigh Power Density

^zLow Gate Drive Requirement

I_ISOL< 1mA

t = 20 Seconds

F_C

Mounting Force

20..120/4.5..27

N/lb

Applications

T_L

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

300

260

°C

T_SOLD

^zPower Inverters

^zUPS

^zMotor Drives

^zSMPS

Weight

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

V_CE= V_CES,V_GE= 0V

300 μA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 60A, V_GE= 15V, Note 1

1.50

1.75

1.80

DS99874A(02/09)

12 3 4 5 6 7 8

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